JANTX2N6764: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 1.050 INCHES MAXIMUM IN, overall_height: 0.420 INCHES MAXIMUM IN, overall_length: 1.573 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), features_provided: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX, internal_configuration: FIELD EFFECT. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-181-2667, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_width | 1.050 INCHES MAXIMUM IN |
| overall_height | 0.420 INCHES MAXIMUM IN |
| overall_length | 1.573 INCHES MAXIMUM IN |
| mounting_method | UNTHREADED HOLE(S) |
| features_provided | HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX |
| internal_configuration | FIELD EFFECT |
| semiconductor_material | SILICON |
| end_item_identification | PRM |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 2 UNTHREADED HOLE AND 1 CASE |
| specification/standard_data | 81349-MIL-PRF-19500/543 GOVERNMENT SPECIFICATION |
| power_rating_per_characteristic | 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| NSN | 5961-01-181-2667 |
| OVERALL HEIGHT | 0.420 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 2 |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 1.573 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM IN |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX |