808740-1 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

808740-1: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 1.050 INCHES MAXIMUM IN, overall_height: 0.420 INCHES MAXIMUM IN, overall_length: 1.573 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), features_provided: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX, internal_configuration: FIELD EFFECT. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-181-2667, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

808740-1

NSN: 5961-01-181-2667
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 96214 — RAYTHEON COMPANY DBA RAYTHEON (USA)

SPECIFICATIONS

overall_width	1.050 INCHES MAXIMUM IN
overall_height	0.420 INCHES MAXIMUM IN
overall_length	1.573 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
features_provided	HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	2 UNTHREADED HOLE AND 1 CASE
specification/standard_data	81349-MIL-PRF-19500/543 GOVERNMENT SPECIFICATION
power_rating_per_characteristic	1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	24.00 AMPERES MINIMUM DARK CURRENT AND 38.00 AMPERES MINIMUM OFF-STATE CURRENT, PEAK
NSN	5961-01-181-2667

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: FIELD EFFECT

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.420 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.573 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	FIELD EFFECT
OVERALL WIDTH	1.050 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX

SUBSTITUTES & CROSS-REFERENCES 4

JANTX2N6764Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

MIL-S-19500/543Reference document

Same NSN cross-reference

Reference document — Secondary reference

MIL-PRF-19500/543Reference document

Same NSN cross-reference

Reference document — Identification reference

10133351Reference document

Same NSN cross-reference

Reference document — Informative reference only

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 808740-1?

808740-1 is a TRANSISTOR.

What parts can replace 808740-1?

There are 4 known substitutes for 808740-1: JANTX2N6764, MIL-S-19500/543, MIL-PRF-19500/543 and 1 more. Substitute compatibility should be verified for your specific system.

What is the NSN for 808740-1?

808740-1 is cataloged in the U.S. Government catalog under NSN 5961-01-181-2667. This indicates validated use in U.S. government and defense supply chains.

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