IRF250 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

IRF250: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC OR PLASTIC ENCLOSURE, overall_width: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM IN, overall_height: 0.249 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN, overall_length: 0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.700 INCHES MINIMUM IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-273-0764, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

IRF250

NSN: 5961-01-273-0764
NIINs: 012730764, 013227092
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 81483 — INFINEON TECHNOLOGIES AMERICAS CORP (USA)

SPECIFICATIONS

material	CERAMIC OR PLASTIC ENCLOSURE
overall_width	0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM IN
overall_height	0.249 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN
overall_length	0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.700 INCHES MINIMUM IN
special_features	ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. L04272
features_provided	HERMETICALLY SEALED CASE
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
NSN	5961-01-273-0764

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.450 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	200.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-3
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.573 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	FIELD EFFECT
OVERALL WIDTH	1.050 INCHES MAXIMUM IN

SUBSTITUTES & CROSS-REFERENCES 8

1RF141Reference document

Same NSN cross-reference

Reference document — Replaced / superseded reference

47A529818P2Reference document

Same NSN cross-reference

Reference document — Secondary reference

DM54LS155JReference document

Same NSN cross-reference

Reference document — Secondary reference

IRF251Reference document

Same NSN cross-reference

Reference document — Secondary reference

5L.5501.002.49Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

IRF141Reference document

Same NSN cross-reference

Reference document — Replaced / superseded reference

LIFECYCLE

NSN statusCancelled· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is IRF250?

IRF250 is a TRANSISTOR.

What parts can replace IRF250?

There are 8 known substitutes for IRF250: 1RF141, 47A529818P2, DM54LS155J and 5 more. Substitute compatibility should be verified for your specific system.

What is the NSN for IRF250?

IRF250 is cataloged in the U.S. Government catalog under NSN 5961-01-273-0764. This indicates validated use in U.S. government and defense supply chains.

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