IRF141: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 1.050 INCHES MAXIMUM IN, overall_height: 0.450 INCHES MAXIMUM IN, overall_length: 1.573 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), features_provided: HERMETICALLY SEALED CASE, internal_configuration: FIELD EFFECT. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-151-6570, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_width | 1.050 INCHES MAXIMUM IN |
| overall_height | 0.450 INCHES MAXIMUM IN |
| overall_length | 1.573 INCHES MAXIMUM IN |
| mounting_method | UNTHREADED HOLE(S) |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | FIELD EFFECT |
| semiconductor_material | SILICON |
| end_item_identification | 5865-01-096-4994 |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 2 PIN AND 1 CASE |
| power_rating_per_characteristic | 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| current_rating_per_characteristic | 20.00 AMPERES MAXIMUM DRAIN CURRENT |
| NSN | 5961-01-151-6570 |
| OVERALL HEIGHT | 0.450 INCHES MAXIMUM IN |
| MOUNTING FACILITY QUANTITY | 2 |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 1.573 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM IN |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| END ITEM IDENTIFICATION | 5865-01-096-4994 |