IDT6116S150DB: MICROCIRCUIT,MEMORY.
The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include body_width: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN, body_height: 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN, body_length: 1.290 INCHES MAXIMUM IN, features_provided: ELECTROSTATIC SENSITIVE AND BIDIRECTIONAL AND STATIC OPERATION, output_logic_form: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC, inclosure_material: CERAMIC. This part is cataloged in the U.S.
Government catalog under NSN 5962-01-229-3339, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| body_width | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN |
| body_height | 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN |
| body_length | 1.290 INCHES MAXIMUM IN |
| features_provided | ELECTROSTATIC SENSITIVE AND BIDIRECTIONAL AND STATIC OPERATION |
| output_logic_form | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| inclosure_material | CERAMIC |
| memory_device_type | RAM |
| storage_temp_range | -65.0 TO 150.0 CELSIUS DEGC |
| test_data_document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| operating_temp_range | -55.0 TO 125.0 CELSIUS DEGC |
| input_circuit_pattern | 19 INPUT |
| inclosure_configuration | DUAL-IN-LINE |
| NSN | 5962-01-229-3339 |
| INPUT CIRCUIT PATTERN | 19 INPUT |
| INCLOSURE MATERIAL | CERAMIC |
| TERMINAL SURFACE TREATMENT | SOLDER |
| BODY WIDTH | 0.560 INCHES NOMINAL IN |
| BODY HEIGHT | 0.120 INCHES MAXIMUM IN |
| FEATURES PROVIDED | BURN IN AND MONOLITHIC AND STATIC OPERATION |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| MEMORY DEVICE TYPE | ROM |
| BODY LENGTH | 1.200 INCHES NOMINAL IN |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |