HP35826E — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

HP35826E: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.090 INCHES MINIMUM AND 0.110 INCHES MAXIMUM IN, overall_height: 0.045 INCHES MINIMUM AND 0.055 INCHES MAXIMUM IN, overall_length: 0.090 INCHES MINIMUM AND 0.110 INCHES MAXIMUM IN, mounting_method: TERMINAL, special_features: JUNCTION PATTERN ARRANGEMENT: NPN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-030-9546, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

HP35826E

NSN: 5961-01-030-9546
NIINs: 010309546, 012351659
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 28480 — HEWLETT-PACKARD COMPANY DBA HP (USA)

SPECIFICATIONS

material	CERAMIC ENCLOSURE
overall_width	0.090 INCHES MINIMUM AND 0.110 INCHES MAXIMUM IN
overall_height	0.045 INCHES MINIMUM AND 0.055 INCHES MAXIMUM IN
overall_length	0.090 INCHES MINIMUM AND 0.110 INCHES MAXIMUM IN
mounting_method	TERMINAL
special_features	JUNCTION PATTERN ARRANGEMENT: NPN
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
end_item_identification	1430-01-042-4907
terminal_type_and_quantity	4 RIBBON
internal_junction_configuration	NPN
power_rating_per_characteristic	700.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
NSN	5961-01-030-9546

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 1.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MOUNTING METHOD: PRESS FIT

•

INTERNAL JUNCTION CONFIGURATION: NPN

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.050 INCHES NOMINAL IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	27.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 1.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MOUNTING METHOD	PRESS FIT
INTERNAL JUNCTION CONFIGURATION	NPN
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	2.500 INCHES NOMINAL IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
OVERALL WIDTH	2.500 INCHES NOMINAL IN
CURRENT RATING PER CHARACTERISTIC	35.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
END ITEM IDENTIFICATION	ANFPS110 RADAR MOD,GENERAL DYNAMICS CORP

SUBSTITUTES & CROSS-REFERENCES 2

35826ESame NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

SM-C-801051-1Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is HP35826E?

HP35826E is a TRANSISTOR.

What parts can replace HP35826E?

There are 2 known substitutes for HP35826E: 35826E, SM-C-801051-1. Substitute compatibility should be verified for your specific system.

What is the NSN for HP35826E?

HP35826E is cataloged in the U.S. Government catalog under NSN 5961-01-030-9546. This indicates validated use in U.S. government and defense supply chains.

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HP35826E — TRANSISTOR

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