35826E — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

35826E: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 2.500 INCHES NOMINAL IN, overall_height: 0.050 INCHES NOMINAL IN, overall_length: 2.500 INCHES NOMINAL IN, mounting_method: PRESS FIT, internal_configuration: JUNCTION CONTACT, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-030-9546, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

35826E

NSN: 5961-01-030-9546
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 28480 — HEWLETT-PACKARD COMPANY DBA HP (USA)

SPECIFICATIONS

overall_width	2.500 INCHES NOMINAL IN
overall_height	0.050 INCHES NOMINAL IN
overall_length	2.500 INCHES NOMINAL IN
mounting_method	PRESS FIT
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
end_item_identification	ANFPS110 RADAR MOD,GENERAL DYNAMICS CORP
terminal_type_and_quantity	4 RIBBON
internal_junction_configuration	NPN
power_rating_per_characteristic	700.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	35.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
voltage_rating_in_volts_per_characteristic	27.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 1.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
NSN	5961-01-030-9546

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 1.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MOUNTING METHOD: PRESS FIT

•

INTERNAL JUNCTION CONFIGURATION: NPN

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.050 INCHES NOMINAL IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	27.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 1.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MOUNTING METHOD	PRESS FIT
INTERNAL JUNCTION CONFIGURATION	NPN
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	2.500 INCHES NOMINAL IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
OVERALL WIDTH	2.500 INCHES NOMINAL IN
CURRENT RATING PER CHARACTERISTIC	35.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
END ITEM IDENTIFICATION	ANFPS110 RADAR MOD,GENERAL DYNAMICS CORP

SUBSTITUTES & CROSS-REFERENCES 2

SM-C-801051-1Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

HP35826EReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 35826E?

35826E is a TRANSISTOR.

What parts can replace 35826E?

There are 2 known substitutes for 35826E: SM-C-801051-1, HP35826E. Substitute compatibility should be verified for your specific system.

What is the NSN for 35826E?

35826E is cataloged in the U.S. Government catalog under NSN 5961-01-030-9546. This indicates validated use in U.S. government and defense supply chains.

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35826E — TRANSISTOR

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