G395748-9 — MICROCIRCUIT,MEMORY

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

G395748-9: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include features_provided: BIPOLAR AND MONOLITHIC AND PROGRAMMED AND SCHOTTKY, output_logic_form: BIPOLAR METAL-OXIDE SEMICONDUCTOR, inclosure_material: CERAMIC, memory_device_type: PROM, storage_temp_range: -65.0 TO 150.0 CELSIUS DEGC, operating_temp_range: -55.0 TO 125.0 CELSIUS DEGC. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-373-9121, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

G395748-9

NSN: 5962-01-373-9121
FSC: 5962 — Microcircuits, Electronic
CAGE: 3B150 — RAYTHEON COMPANY DBA RAYTHEON CO (USA)

SPECIFICATIONS

features_provided	BIPOLAR AND MONOLITHIC AND PROGRAMMED AND SCHOTTKY
output_logic_form	BIPOLAR METAL-OXIDE SEMICONDUCTOR
inclosure_material	CERAMIC
memory_device_type	PROM
storage_temp_range	-65.0 TO 150.0 CELSIUS DEGC
operating_temp_range	-55.0 TO 125.0 CELSIUS DEGC
hybrid_technology_type	MONOLITHIC
end_item_identification	SUB HPA E/I FSCM 49956
inclosure_configuration	DUAL-IN-LINE
terminal_surface_treatment	SOLDER
specification/standard_data	67268-8200801JA GOVERNMENT STANDARD
time_rating_per_chacteristic	95.00 NANOSECONDS NOMINAL ACCESS NS
NSN	5962-01-373-9121

COMPONENT DIAGRAM

KEY FEATURES

•

HYBRID TECHNOLOGY TYPE: MONOLITHIC

•

INCLOSURE MATERIAL: CERAMIC

•

TERMINAL SURFACE TREATMENT: SOLDER

•

FEATURES PROVIDED: BIPOLAR AND MONOLITHIC AND PROGRAMMED AND SCHOTTKY

•

INCLOSURE CONFIGURATION: DUAL-IN-LINE

•

PURCHASE DESCRIPTION IDENTIFICATION: 49956-G395748-9

•

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM OUTPUT SINK

•

MEMORY DEVICE TYPE: PROM

TYPICAL APPLICATIONS

Server memory expansion for virtualization workloads
Database performance optimization (in-memory computing)
VDI and remote desktop session hosting
High-performance computing (HPC) clusters
Mail server and collaboration platform scaling
Application server tier expansion

TECHNICAL CHARACTERISTICS

HYBRID TECHNOLOGY TYPE	MONOLITHIC
INCLOSURE MATERIAL	CERAMIC
TERMINAL SURFACE TREATMENT	SOLDER
FEATURES PROVIDED	BIPOLAR AND MONOLITHIC AND PROGRAMMED AND SCHOTTKY
INCLOSURE CONFIGURATION	DUAL-IN-LINE
PURCHASE DESCRIPTION IDENTIFICATION	49956-G395748-9
CURRENT RATING PER CHARACTERISTIC	100.00 MILLIAMPERES MAXIMUM OUTPUT SINK
MEMORY DEVICE TYPE	PROM
DEPARTURE FROM CITED DESIGNATOR	ALTERED BY PROGRAMMING & TESTING
CASE OUTLINE SOURCE AND DESIGNATOR	D-3 MIL-M-38510

SUBSTITUTES & CROSS-REFERENCES 4

PRG395748-9Reference document

Same NSN cross-reference

Reference document — Secondary reference

ROM/PROMReference document

Same NSN cross-reference

Reference document — Secondary reference

8200801JAReference document

Same NSN cross-reference

Reference document — Secondary reference

M38510/21101BJAReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandDemilitarization required — critical (Q)

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FREQUENTLY ASKED QUESTIONS

What is G395748-9?

G395748-9 is a MICROCIRCUIT,MEMORY.

What parts can replace G395748-9?

There are 4 known substitutes for G395748-9: PRG395748-9, ROM/PROM, 8200801JA and 1 more. Substitute compatibility should be verified for your specific system.

What is the NSN for G395748-9?

G395748-9 is cataloged in the U.S. Government catalog under NSN 5962-01-373-9121. This indicates validated use in U.S. government and defense supply chains.

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