The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include overall_length: 0.210 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.230 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, semiconductor_material: SILICON ALL TRANSISTOR. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-444-6668, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.210 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 0.500 INCHES MINIMUM IN |
| overall_diameter | 0.230 INCHES MAXIMUM IN |
| features_provided | HERMETICALLY SEALED CASE |
| semiconductor_material | SILICON ALL TRANSISTOR |
| terminal_circle_diameter | 0.100 INCHES NOMINAL IN |
| terminal_type_and_quantity | 8 UNINSULATED WIRE LEAD |
| component_name_and_quantity | 2 TRANSISTOR |
| power_rating_per_characteristic | 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SECOND TRANSISTOR |
| voltage_rating_in_volts_per_characteristic | 30.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL SEMICONDUCTOR |
| maximum_operating_temp_per_measurement_point | 200.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-00-444-6668 |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL IN |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM IN |
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-71 |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM IN |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM IN |
| POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SECOND TRANSISTOR |
| POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION FIRST TRANSISTOR |