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CF-WMBA601GIS — Samsung 1GB PC2-5300 667MHZ DDR2 SODIM MEMORY

✓ Government record, cited
— · MEMORY · RDIMM
PRODUCT OVERVIEW

CF-WMBA601GIS: Samsung 1GB PC2-5300 667MHZ DDR2 SODIM MEMORY.

Samsung 1GB PC2-5300 667MHZ DDR2 SODIM MEMORY. Key specifications include special_features: TYPE IS DDR2 SODIMM; CAPACITY 1GB; SPEED PC5400 667MHZ; SIZE AND BIT IS 128MX64/64MX8; 200 PINS; NO ECC; SAMSUNG CHIP GB, functional_description: RAM MEMORY CHIP SPECIFICATIONS: 1GB, 667MHZ, DDR2-667 PC2-5300, 200P, SODIMM, 1.8V GB, end_item_identification: CF-52 DCCDZBM (0J4G8) TOUGHBOOK 52 LAPTOP, voltage_in_volts_and_current_type: 1.80 AC/DC. This part is cataloged in the U.S.

Government catalog under NSN 7025-01-562-1728, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
MEMORY→ RDIMM→ CF-WMBA601GIS
NSN: 7025-01-562-1728
FSC: 7025 — Information Technology Input/output and Storage Devices
CAGE: 0J4G8 — PANASONIC INDUSTRIAL CO AFFIL OF MATSUSHITA ELECTRIC CORP OF AMERICA (USA)
SPECIFICATIONS
special_featuresTYPE IS DDR2 SODIMM; CAPACITY 1GB; SPEED PC5400 667MHZ; SIZE AND BIT IS 128MX64/64MX8; 200 PINS; NO ECC; SAMSUNG CHIP GB
functional_descriptionRAM MEMORY CHIP SPECIFICATIONS: 1GB, 667MHZ, DDR2-667 PC2-5300, 200P, SODIMM, 1.8V GB
end_item_identificationCF-52 DCCDZBM (0J4G8) TOUGHBOOK 52 LAPTOP
voltage_in_volts_and_current_type1.80 AC/DC
NSN7025-01-562-1728
COMPONENT DIAGRAM
ECC 1GB 2Rx4 PC4 — RDIMM OEM NOTCH ~133.35 mm DDR4 RDIMM | 1GB | — | PC4 Notch position = DDR4 generation | DDR3/DDR4/DDR5 physically incompatible RDIMM = Registered (servers) | LRDIMM = Load-Reduced | UDIMM = Unbuffered TITLE DDR4 RDIMM PN CF-WMBA601GIS MFR OEM 1GB —
KEY FEATURES
•
1GB Capacity
•
VOLTAGE IN VOLTS AND CURRENT TYPE: 1.80 AC/DC
•
FUNCTIONAL DESCRIPTION: RAM MEMORY CHIP SPECIFICATIONS: 1GB, 667MHZ, DDR2-667 PC2-5300, 200P, SODIMM, 1.8V GB
TYPICAL APPLICATIONS
  • Server memory expansion for virtualization workloads
  • Database performance optimization (in-memory computing)
  • VDI and remote desktop session hosting
  • High-performance computing (HPC) clusters
  • Mail server and collaboration platform scaling
  • Application server tier expansion
TECHNICAL CHARACTERISTICS
VOLTAGE IN VOLTS AND CURRENT TYPE1.80 AC/DC
SPECIAL FEATURESTYPE IS DDR2 SODIMM; CAPACITY 1GB; SPEED PC5400 667MHZ; SIZE AND BIT IS 128MX64/64MX8; 200 PINS; NO ECC; SAMSUNG CHIP GB
FUNCTIONAL DESCRIPTIONRAM MEMORY CHIP SPECIFICATIONS: 1GB, 667MHZ, DDR2-667 PC2-5300, 200P, SODIMM, 1.8V GB
END ITEM IDENTIFICATIONCF-52 DCCDZBM (0J4G8) TOUGHBOOK 52 LAPTOP
SUBSTITUTES & CROSS-REFERENCES 2
ROM/PROMReference document
Same NSN cross-reference
Reference document — Secondary reference
M470T2953EZ3-CE6Reference document
Samsung 1GB PC2-5300 667MHZ DDR2 SODIM MEMORY
Reference document — Secondary reference
LIFECYCLE
NSN statusActive· U.S. Government catalog
Acquisition advice: Normally procured from the manufacturer (OEM)Demilitarization required — critical (Q)
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FREQUENTLY ASKED QUESTIONS
What is CF-WMBA601GIS?
CF-WMBA601GIS is a Samsung 1GB PC2-5300 667MHZ DDR2 SODIM MEMORY. It is classified as a MEMORY (RDIMM).
What parts can replace CF-WMBA601GIS?
There are 2 known substitutes for CF-WMBA601GIS: ROM/PROM, M470T2953EZ3-CE6. Substitute compatibility should be verified for your specific system.
What is the NSN for CF-WMBA601GIS?
CF-WMBA601GIS is cataloged in the U.S. Government catalog under NSN 7025-01-562-1728. This indicates validated use in U.S. government and defense supply chains.
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