C147PX147: SEMICONDUCTOR DEVICE,THYRISTOR.
The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 1.742 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), nominal_thread_size: 0.250 INCHES IN, semiconductor_material: SILICON, thread_series_designator: UNF, overall_width_across_flats: 0.684 INCHES MAXIMUM IN. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-110-4782, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 1.742 INCHES MAXIMUM IN |
| mounting_method | THREADED STUD(S) |
| nominal_thread_size | 0.250 INCHES IN |
| semiconductor_material | SILICON |
| thread_series_designator | UNF |
| mounting_facility_quantity | 1 |
| overall_width_across_flats | 0.684 INCHES MAXIMUM IN |
| terminal_type_and_quantity | 1 THREADED STUD AND 2 TAB, SOLDER LUG |
| power_rating_per_characteristic | 100.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 2.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION |
| current_rating_per_characteristic | 63.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 40.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 1000.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE |
| voltage_rating_in_volts_per_characteristic | 1200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE |
| maximum_operating_temp_per_measurement_point | 125.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-110-4782 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 1 |
| MOUNTING METHOD | THREADED STUD(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 1.742 INCHES MAXIMUM IN |
| OVERALL WIDTH ACROSS FLATS | 0.684 INCHES MAXIMUM IN |
| NOMINAL THREAD SIZE | 0.250 INCHES IN |
| CURRENT RATING PER CHARACTERISTIC | 63.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 40.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 1000.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE |
| TEST DATA DOCUMENT | 96214-801577 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |