50RCS100: SEMICONDUCTOR DEVICE,THYRISTOR.
The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_width: 0.683 INCHES MAXIMUM IN, overall_height: 0.565 INCHES MAXIMUM IN, overall_length: 1.742 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.250 INCHES IN. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-003-2623, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_width | 0.683 INCHES MAXIMUM IN |
| overall_height | 0.565 INCHES MAXIMUM IN |
| overall_length | 1.742 INCHES MAXIMUM IN |
| mounting_method | THREADED STUD(S) |
| features_provided | HERMETICALLY SEALED CASE |
| nominal_thread_size | 0.250 INCHES IN |
| semiconductor_material | SILICON |
| thread_series_designator | UNF |
| mounting_facility_quantity | 1 |
| overall_width_across_flats | 0.684 INCHES MAXIMUM IN |
| terminal_type_and_quantity | 1 THREADED STUD AND 2 TAB, SOLDER LUG |
| power_rating_per_characteristic | 100.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 2.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION |
| NSN | 5961-01-003-2623 |
| OVERALL HEIGHT | 0.565 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1000.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 1 |
| MOUNTING METHOD | THREADED STUD(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.565 INCHES MAXIMUM IN |
| OVERALL WIDTH | 0.683 INCHES MAXIMUM IN |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| NOMINAL THREAD SIZE | 0.224 INCHES IN |