The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: STEEL CORROSION RESISTING, end_similarity: IDENTICAL, overall_length: 0.190 INCHES NOMINAL IN, first_end_style: FLAT KEYWAY, mounting_method: TERMINAL, terminal_length: 0.500 INCHES NOMINAL IN. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-057-4801, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | STEEL CORROSION RESISTING |
| end_similarity | IDENTICAL |
| overall_length | 0.190 INCHES NOMINAL IN |
| first_end_style | FLAT KEYWAY |
| mounting_method | TERMINAL |
| terminal_length | 0.500 INCHES NOMINAL IN |
| overall_diameter | 0.219 INCHES NOMINAL IN |
| special_features | JUNCTION PATTERN ARRANGEMENT: NPN |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| end_item_identification | OFFSET DIAPHRAM PUMP,EDSON CORP,MODELS 557BR,557AL,554BR,554AL |
| NSN | 5961-00-057-4801 |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM0.500 INCHES MINIMUM IN |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODEANODE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPNJUNCTION PATTERN ARRANGEMENT: NPN |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM0.370 INCHES MAXIMUM IN |
| FEATURES PROVIDED | HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE |
| INTERNAL CONFIGURATION | JUNCTION CONTACTJUNCTION CONTACT |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD3 UNINSULATED WIRE LEAD |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL0.200 INCHES NOMINAL IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 160.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 160.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 140.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN140.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| SEMICONDUCTOR MATERIAL | SILICONSILICON |