The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.190 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES NOMINAL IN, overall_diameter: 0.219 INCHES NOMINAL IN, special_features: JUNCTION PATTERN ARRANGEMENT: NPN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-998-1923, indicating validated use in U.S.
government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.190 INCHES NOMINAL IN |
| mounting_method | TERMINAL |
| terminal_length | 0.500 INCHES NOMINAL IN |
| overall_diameter | 0.219 INCHES NOMINAL IN |
| special_features | JUNCTION PATTERN ARRANGEMENT: NPN |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| terminal_circle_diameter | 0.100 INCHES NOMINAL IN |
| terminal_type_and_quantity | 3 UNINSULATED WIRE LEAD |
| power_rating_per_characteristic | 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| voltage_rating_in_volts_per_characteristic | -30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| NSN | 5961-00-998-1923 |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL IN |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| POWER RATING PER CHARACTERISTIC | 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| TERMINAL LENGTH | 0.500 INCHES NOMINAL IN |
| OVERALL DIAMETER | 0.219 INCHES NOMINAL IN |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |