91328722: LIGHT EMITTING DIODE.
The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_length: 0.373 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.627 INCHES MINIMUM IN, overall_diameter: 0.240 INCHES MAXIMUM IN, lens_transparency: TRANSLUCENT. This part is cataloged in the U.S.
Government catalog under NSN 5980-00-564-5490, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_length | 0.373 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 0.627 INCHES MINIMUM IN |
| overall_diameter | 0.240 INCHES MAXIMUM IN |
| lens_transparency | TRANSLUCENT |
| luminous_intensity | 0.8 MILLICANDELA NOMINAL |
| internal_configuration | POINT CONTACT |
| semiconductor_material | GALLIUM ARSENIDE PHOSPHIDE |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD |
| color_tone_produced_per_source | RED LENS |
| internal_junction_configuration | PN |
| NSN | 5980-00-564-5490 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.0 MAXIMUM REVERSE VOLTAGE, DC |
| OVERALL DIAMETER | 0.240 INCHES MAXIMUM IN |
| TERMINAL LENGTH | 0.627 INCHES MINIMUM IN |
| MOUNTING METHOD | TERMINAL |
| INTERNAL JUNCTION CONFIGURATION | PN |
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE PHOSPHIDE |
| LUMINOUS INTENSITY | 0.8 MILLICANDELA NOMINAL |
| OVERALL LENGTH | 0.373 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | POINT CONTACT |
| CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC |