5082-4850 — LIGHT EMITTING DIODE

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

5082-4850: LIGHT EMITTING DIODE.

The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_length: 0.240 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 0.627 INCHES MINIMUM IN, overall_diameter: 0.135 INCHES NOMINAL IN, lens_transparency: TRANSLUCENT. This part is cataloged in the U.S.

Government catalog under NSN 5980-00-564-5490, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

5082-4850

NSN: 5980-00-564-5490
NIINs: 005645490, 011106854
FSC: 5980 — Optoelectronic Devices and Associated Hardware
CAGE: 28480 — HEWLETT-PACKARD COMPANY DBA HP (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_length	0.240 INCHES NOMINAL IN
mounting_method	TERMINAL
terminal_length	0.627 INCHES MINIMUM IN
overall_diameter	0.135 INCHES NOMINAL IN
lens_transparency	TRANSLUCENT
luminous_intensity	0.8 MILLICANDELA NOMINAL
internal_configuration	POINT CONTACT
semiconductor_material	GALLIUM ARSENIDE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
color_tone_produced_per_source	RED LENS
internal_junction_configuration	PN
NSN	5980-00-564-5490

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC

•

OVERALL DIAMETER: 0.240 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.627 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

INTERNAL JUNCTION CONFIGURATION: PN

•

SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE

•

LUMINOUS INTENSITY: 0.8 MILLICANDELA NOMINAL

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	3.0 MAXIMUM REVERSE VOLTAGE, DC
OVERALL DIAMETER	0.240 INCHES MAXIMUM IN
TERMINAL LENGTH	0.627 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
INTERNAL JUNCTION CONFIGURATION	PN
SEMICONDUCTOR MATERIAL	GALLIUM ARSENIDE PHOSPHIDE
LUMINOUS INTENSITY	0.8 MILLICANDELA NOMINAL
OVERALL LENGTH	0.373 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	POINT CONTACT
CURRENT RATING PER CHARACTERISTIC	1.00 AMPERES MAXIMUM FORWARD CURRENT, DC

SUBSTITUTES & CROSS-REFERENCES 6

MV5013Reference document

Same NSN cross-reference

Reference document — Secondary reference

190-0002Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

000.19499Reference document

Same NSN cross-reference

Reference document — Secondary reference

160004-4Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

91328722Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

160004-0004Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

LIFECYCLE

NSN statusCancelled· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 5082-4850?

5082-4850 is a LIGHT EMITTING DIODE.

What parts can replace 5082-4850?

There are 6 known substitutes for 5082-4850: MV5013, 190-0002, 000.19499 and 3 more. Substitute compatibility should be verified for your specific system.

What is the NSN for 5082-4850?

5082-4850 is cataloged in the U.S. Government catalog under NSN 5980-00-564-5490. This indicates validated use in U.S. government and defense supply chains.

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5082-4850 — LIGHT EMITTING DIODE

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