Name: MICROCIRCUIT,MEMORY
Brand: Unknown
SKU: 82008F1JB

82008F1JB ✓ Verified by PartsTable

— · COMPONENT

WHAT YOU NEED TO KNOW

Verify manufacturer and server generation compatibility Check if Option PN or Spare PN — same part, different channel

Confirm exact part number — similar PNs may be different parts

PRODUCT OVERVIEW

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include body_width: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN, body_height: 0.210 INCHES MAXIMUM IN, body_length: 1.290 INCHES MAXIMUM IN, memory_capacity: UNKNOWN, features_provided: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND BIPOLAR AND PROGRAMMABLE, output_logic_form: BIPOLAR METAL-OXIDE SEMICONDUCTOR. This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5962-01-196-6113, indicating validated use in U.S.

government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

82008F1JB

NSN: 5962-01-196-6113
FSC: 5962
CAGE: 67268 — DLA LAND AND MARITIME DBA ENGINEERING AND TECHNICAL SUPPORT DIV DOCUMENT STANDARDIZATION DIVISION (STANDARD MICROCIRCUIT (USA)

SPECIFICATIONS

body_width	0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN
body_height	0.210 INCHES MAXIMUM IN
body_length	1.290 INCHES MAXIMUM IN
memory_capacity	UNKNOWN
features_provided	HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND BIPOLAR AND PROGRAMMABLE
output_logic_form	BIPOLAR METAL-OXIDE SEMICONDUCTOR
inclosure_material	CERAMIC
memory_device_type	ROM
storage_temp_range	-65.0 TO 150.0 CELSIUS DEGC
operating_temp_range	-55.0 TO 125.0 CELSIUS DEGC
input_circuit_pattern	14 INPUT
inclosure_configuration	DUAL-IN-LINE
NSN	5962-01-196-6113

COMPONENT DIAGRAM

KEY FEATURES

•

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES NOMINAL OUTPUT

•

MEMORY DEVICE TYPE: ROM

•

CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510

•

VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE

•

MEMORY CAPACITY: UNKNOWN

•

TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT

•

TEST DATA DOCUMENT: 14933-82008 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)

•

TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS

TYPICAL APPLICATIONS

Server memory expansion for virtualization workloads
Database performance optimization (in-memory computing)
VDI and remote desktop session hosting
High-performance computing (HPC) clusters
Mail server and collaboration platform scaling
Application server tier expansion

TECHNICAL CHARACTERISTICS (FLIS)

CURRENT RATING PER CHARACTERISTIC	100.00 MILLIAMPERES NOMINAL OUTPUT
MEMORY DEVICE TYPE	ROM
CASE OUTLINE SOURCE AND DESIGNATOR	D-3 MIL-M-38510
VOLTAGE RATING AND TYPE PER CHARACTERISTIC	5.0 VOLTS MAXIMUM POWER SOURCE
MEMORY CAPACITY	UNKNOWN
TERMINAL TYPE AND QUANTITY	24 PRINTED CIRCUIT
TEST DATA DOCUMENT	14933-82008 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)
TIME RATING PER CHACTERISTIC	45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS
TERMINAL SURFACE TREATMENT	SOLDER
INPUT CIRCUIT PATTERN	14 INPUT

VERIFIED SUBSTITUTES & CROSS-REFERENCES 28

B18.2.1Interchangeable