The Microcircuit,memory, cataloged under National Stock Number 5962-01-338-2449, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Honeywell Intl Inc Defense Avionics Systems Former Test Systems Div. Government technical data includes 19 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 3 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 5 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-338-2449 |
| Primary Part Number | 6456113-1 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Honeywell Intl Inc Defense Avionics Systems Former Test Systems Div |
| Status | ACTIVE |
| Inclosure Configuration | DUAL-IN-LINE |
| Maximum Power Dissipation Rating | 1.0 WATTS |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Memory Device Type | ROM |
| Voltage Rating and Type Per Characteristic | 6.5 VOLTS MAXIMUM POWER SOURCE |
| Case Outline Source and Designator | D-10 MIL-M-38510 |
| Terminal Surface Treatment | SOLDER |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Time Rating Per Chacteristic | 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Terminal Type and Quantity | 28 PRINTED CIRCUIT |
| Memory Capacity | UNKNOWN |
| Inclosure Material | CERAMIC |
| Body Width | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND W/ENABLE AND ELECTROSTATIC SENSITIVE |
| Output Logic Form | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| Input Circuit Pattern | 17 INPUT |
| Body Height | 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM IN |
| Body Length | 1.490 INCHES MAXIMUM IN |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| ROM/PROM | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 8411101YA | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (standard Microcircuit (USA) |
| 6456113-1 PRIMARY | Honeywell Intl Inc Defense Avionics Systems Former Test Systems Div (USA) |
NSN 5962-01-338-2449 is a Microcircuit,memory, manufactured by Honeywell Intl Inc Defense Avionics Systems Former Test Systems Div, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-338-2449 has 3 cross-referenced part numbers: ROM/PROM (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 8411101YA (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (standard Microcircuit), 6456113-1 (Honeywell Intl Inc Defense Avionics Systems Former Test Systems Div).
There are 5 known substitutes for 5962-01-338-2449: 5962-01-200-7684, 5962-01-303-9935, 5962-01-304-1414 and 2 more. Verify interchangeability with system specifications before substitution.
Key specifications for 6456113-1: Inclosure Configuration: DUAL-IN-LINE; Maximum Power Dissipation Rating: 1.0 WATTS; Operating Temp Range: -55.0 TO 125.0 CELSIUS DEGC; Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC. 19 total characteristics are documented in the Federal Logistics Information System.