The Microcircuit,memory, cataloged under National Stock Number 5962-01-303-3557, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 18 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 3 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-303-3557 |
| Primary Part Number | 50001-2 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Body Length | 1.490 INCHES MAXIMUM IN |
| Body Width | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN |
| Output Logic Form | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Memory Capacity | UNKNOWN |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Terminal Type and Quantity | 28 PRINTED CIRCUIT |
| Time Rating Per Chacteristic | 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Case Outline Source and Designator | D-10 MIL-M-38510 |
| Memory Device Type | ROM |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND W/ENABLE AND PROGRAMMABLE AND ELECTROSTATIC SENSITIVE |
| Body Height | 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM IN |
| Inclosure Configuration | DUAL-IN-LINE |
| Inclosure Material | CERAMIC |
| Maximum Power Dissipation Rating | 1.0 WATTS |
| Input Circuit Pattern | 17 INPUT |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 50001-2 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| 8202503YA | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (standard Microcircuit (USA) |
| ROM/PROM FAMILY 091 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
NSN 5962-01-303-3557 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-303-3557 has 3 cross-referenced part numbers: 50001-2 (Raytheon Company Div Rmd Strategic), 8202503YA (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (standard Microcircuit), ROM/PROM FAMILY 091 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)).
There are 12 known substitutes for 5962-01-303-3557: 5340-00-004-2198, 5330-00-250-5753, 2990-00-737-3993 and 9 more. Verify interchangeability with system specifications before substitution.
Key specifications for 50001-2: Body Length: 1.490 INCHES MAXIMUM IN; Body Width: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN; Output Logic Form: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC; Operating Temp Range: -55.0 TO 125.0 CELSIUS DEGC. 18 total characteristics are documented in the Federal Logistics Information System.