The Microcircuit,memory, cataloged under National Stock Number 5962-01-254-6235, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems. Government technical data includes 19 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 3 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-254-6235 |
| Primary Part Number | 5812751P9 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems |
| Status | ACTIVE |
| Features Provided | PROGRAMMABLE AND SCHOTTKY AND MONOLITHIC AND BIPOLAR AND 3-STATE OUTPUT AND HIGH IMPEDANCE |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Inclosure Configuration | DUAL-IN-LINE |
| Precious Material and Location | TERMINAL SURFACES OPTION GOLD |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Precious Material | GOLD |
| Voltage Rating and Type Per Characteristic | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| Terminal Type and Quantity | 20 PRINTED CIRCUIT |
| Time Rating Per Chacteristic | 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Terminal Surface Treatment | GOLD |
| Memory Device Type | ROM |
| Body Width | 0.280 INCHES MINIMUM AND 0.300 INCHES MAXIMUM IN |
| Body Length | 0.970 INCHES MINIMUM AND 1.010 INCHES MAXIMUM IN |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Maximum Power Dissipation Rating | 1.02 WATTS |
| Inclosure Material | CERAMIC AND GLASS |
| Body Height | 0.155 INCHES MAXIMUM IN |
| Input Circuit Pattern | 10 INPUT |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| ROM/PROM FAMILY 016 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 5812751P9 PRIMARY | Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems (USA) |
| M38510/20805BRX | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
NSN 5962-01-254-6235 is a Microcircuit,memory, manufactured by Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-254-6235 has 3 cross-referenced part numbers: ROM/PROM FAMILY 016 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 5812751P9 (Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems), M38510/20805BRX (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M).
There are 12 known substitutes for 5962-01-254-6235: 5962-01-254-6229, 5962-01-254-6230, 5962-01-254-6232 and 9 more. Verify interchangeability with system specifications before substitution.
Key specifications for 5812751P9: Features Provided: PROGRAMMABLE AND SCHOTTKY AND MONOLITHIC AND BIPOLAR AND 3-STATE OUTPUT AND HIGH IMPEDANCE; Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC; Inclosure Configuration: DUAL-IN-LINE; Precious Material and Location: TERMINAL SURFACES OPTION GOLD. 19 total characteristics are documented in the Federal Logistics Information System.