The Microcircuit,memory, cataloged under National Stock Number 5962-01-254-6233, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems. Government technical data includes 19 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 3 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-254-6233 |
| Primary Part Number | 5812751P12 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems |
| Status | ACTIVE |
| Input Circuit Pattern | 10 INPUT |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Maximum Power Dissipation Rating | 1.02 WATTS |
| Time Rating Per Chacteristic | 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Terminal Surface Treatment | GOLD |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Precious Material and Location | TERMINAL SURFACES OPTION GOLD |
| Precious Material | GOLD |
| Memory Device Type | ROM |
| Terminal Type and Quantity | 20 PRINTED CIRCUIT |
| Voltage Rating and Type Per Characteristic | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| Body Height | 0.155 INCHES MAXIMUM IN |
| Inclosure Material | CERAMIC AND GLASS |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Body Length | 0.970 INCHES MINIMUM AND 1.010 INCHES MAXIMUM IN |
| Inclosure Configuration | DUAL-IN-LINE |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Features Provided | PROGRAMMABLE AND SCHOTTKY AND MONOLITHIC AND BIPOLAR AND 3-STATE OUTPUT AND HIGH IMPEDANCE |
| Body Width | 0.280 INCHES MINIMUM AND 0.300 INCHES MAXIMUM IN |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| ROM/PROM FAMILY 016 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| M38510/20805BRX | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| 5812751P12 PRIMARY | Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems (USA) |
NSN 5962-01-254-6233 is a Microcircuit,memory, manufactured by Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-254-6233 has 3 cross-referenced part numbers: ROM/PROM FAMILY 016 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), M38510/20805BRX (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), 5812751P12 (Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems).
There are 12 known substitutes for 5962-01-254-6233: 5962-01-254-6229, 5962-01-254-6230, 5962-01-254-6232 and 9 more. Verify interchangeability with system specifications before substitution.
Key specifications for 5812751P12: Input Circuit Pattern: 10 INPUT; Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC; Maximum Power Dissipation Rating: 1.02 WATTS; Time Rating Per Chacteristic: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS. 19 total characteristics are documented in the Federal Logistics Information System.