The Microcircuit,memory, cataloged under National Stock Number 5962-01-250-2845, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Dba Raytheon Co. Government technical data includes 17 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 9 commercial cross-references from 5 manufacturers, enabling identification through both NSN and commercial part number lookups. 10 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-250-2845 |
| Primary Part Number | G311410-1 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Dba Raytheon Co |
| Status | ACTIVE |
| Voltage Rating and Type Per Characteristic | 5.0 VOLTS MAXIMUM POWER SOURCE |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Time Rating Per Chacteristic | 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Terminal Surface Treatment | SOLDER |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Memory Device Type | ROM |
| Memory Capacity | UNKNOWN |
| Body Width | 0.310 INCHES MAXIMUM IN |
| Body Length | 0.785 INCHES MAXIMUM IN |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND 3-STATE OUTPUT |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Input Circuit Pattern | 6 INPUT |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Body Height | 0.185 INCHES MAXIMUM IN |
| Inclosure Material | CERAMIC |
| Inclosure Configuration | DUAL-IN-LINE |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| PRG311410-1 | Raytheon Company Div Corp (USA) |
| G311410-1 | Raytheon Company (USA) |
| AM27S19DMB | Advanced Micro Devices Inc Dba AMD Austin (USA) |
| ROM/PROM | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| G286939-1 | Raytheon Company Div Corp (USA) |
| G311410-1 PRIMARY | Raytheon Company Dba Raytheon Co (USA) |
| PRG311410-1 | Raytheon Company Dba Raytheon Co (USA) |
| G286939-1 | Raytheon Company Dba Raytheon Co (USA) |
| G311410-1 | Raytheon Company Div Corp (USA) |
NSN 5962-01-250-2845 is a Microcircuit,memory, manufactured by Raytheon Company Dba Raytheon Co, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-250-2845 has 9 cross-referenced part numbers: PRG311410-1 (Raytheon Company Div Corp), G311410-1 (Raytheon Company), AM27S19DMB (Advanced Micro Devices Inc Dba AMD Austin), ROM/PROM (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), G286939-1 (Raytheon Company Div Corp) and 4 more.
There are 10 known substitutes for 5962-01-250-2845: 5962-01-214-8830, 5962-01-214-8831, 5962-01-214-8832 and 7 more. Verify interchangeability with system specifications before substitution.
Key specifications for G311410-1: End Item Identification: RADAR SET AN/FPS-115; Voltage Rating and Type Per Characteristic: 5.0 VOLTS MAXIMUM POWER SOURCE; Terminal Type and Quantity: 16 PRINTED CIRCUIT; Time Rating Per Chacteristic: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS. 18 total characteristics are documented in the Federal Logistics Information System.