The Microcircuit,memory, cataloged under National Stock Number 5962-01-214-8833, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Dba Raytheon Co. Government technical data includes 16 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 7 commercial cross-references from 5 manufacturers, enabling identification through both NSN and commercial part number lookups. 11 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-214-8833 |
| Primary Part Number | G311478-1 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Dba Raytheon Co |
| Status | ACTIVE |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Voltage Rating and Type Per Characteristic | -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE |
| Terminal Type and Quantity | 20 PRINTED CIRCUIT |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Terminal Surface Treatment | SOLDER |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Body Height | 0.185 INCHES MAXIMUM IN |
| Memory Device Type | PAL |
| Inclosure Configuration | DUAL-IN-LINE |
| Body Length | 1.060 INCHES MAXIMUM IN |
| Features Provided | BURN IN AND BIPOLAR AND MONOLITHIC AND PROGRAMMED |
| Case Outline Source and Designator | D-8 MIL-M-38510 |
| Maximum Power Dissipation Rating | 2.0 WATTS |
| Inclosure Material | CERAMIC |
| Input Circuit Pattern | 12 INPUT |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| G311478-1 | Raytheon Company (USA) |
| M38510/50302BRA | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| G311478-1 | Raytheon Company Div Corp (USA) |
| ROM/PROM FAMILY 105 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| G311478-1 PRIMARY | Raytheon Company Dba Raytheon Co (USA) |
| 8103502RX | Raytheon Company Div Corp (USA) |
| 8103502RX | Raytheon Company Dba Raytheon Co (USA) |
NSN 5962-01-214-8833 is a Microcircuit,memory, manufactured by Raytheon Company Dba Raytheon Co, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-214-8833 has 7 cross-referenced part numbers: G311478-1 (Raytheon Company), M38510/50302BRA (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), G311478-1 (Raytheon Company Div Corp), ROM/PROM FAMILY 105 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), G311478-1 (Raytheon Company Dba Raytheon Co) and 2 more.
There are 11 known substitutes for 5962-01-214-8833: 5962-01-209-4609, 5962-01-217-3695, 5962-01-248-8654 and 8 more. Verify interchangeability with system specifications before substitution.
Key specifications for G311478-1: Test Data Document: 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).; Body Width: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN; Voltage Rating and Type Per Characteristic: -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE; Terminal Type and Quantity: 20 PRINTED CIRCUIT. 16 total characteristics are documented in the Federal Logistics Information System.