The Microcircuit,memory, cataloged under National Stock Number 5962-01-202-4652, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 19 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 6 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-202-4652 |
| Primary Part Number | 42899 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Maximum Power Dissipation Rating | 739.0 MILLIWATTS |
| Features Provided | HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND SCHOTTKY |
| Case Outline Source and Designator | D-2 MIL-M-38510 |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Terminal Surface Treatment | SOLDER |
| Memory Device Type | ROM |
| Memory Capacity | UNKNOWN |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Time Rating Per Chacteristic | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Body Height | 0.185 INCHES NOMINAL IN |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Body Length | 0.840 INCHES MAXIMUM IN |
| Inclosure Configuration | DUAL-IN-LINE |
| Inclosure Material | CERAMIC |
| Input Circuit Pattern | 10 INPUT |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 42899 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| M38510/20302BEB | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| 722901-50 | Raytheon Company Div Rmd Strategic (USA) |
| ROM/PROM FAMILY 005 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
NSN 5962-01-202-4652 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-202-4652 has 4 cross-referenced part numbers: 42899 (Raytheon Company Div Rmd Strategic), M38510/20302BEB (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), 722901-50 (Raytheon Company Div Rmd Strategic), ROM/PROM FAMILY 005 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)).
There are 6 known substitutes for 5962-01-202-4652: 5962-01-078-7029, 5962-01-202-2959, 5962-01-202-2960 and 3 more. Verify interchangeability with system specifications before substitution.
Key specifications for 42899: Maximum Power Dissipation Rating: 739.0 MILLIWATTS; Features Provided: HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND SCHOTTKY; Case Outline Source and Designator: D-2 MIL-M-38510; Terminal Type and Quantity: 16 PRINTED CIRCUIT. 19 total characteristics are documented in the Federal Logistics Information System.