The Microcircuit,memory, cataloged under National Stock Number 5962-01-202-2961, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 19 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 7 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-202-2961 |
| Primary Part Number | 42900 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Inclosure Material | CERAMIC |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Memory Capacity | UNKNOWN |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Terminal Surface Treatment | SOLDER |
| Case Outline Source and Designator | D-2 MIL-M-38510 |
| Memory Device Type | ROM |
| Time Rating Per Chacteristic | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Body Height | 0.185 INCHES NOMINAL IN |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Maximum Power Dissipation Rating | 739.0 MILLIWATTS |
| Input Circuit Pattern | 10 INPUT |
| Body Length | 0.840 INCHES MAXIMUM IN |
| Inclosure Configuration | DUAL-IN-LINE |
| Features Provided | HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND SCHOTTKY |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 722901-50 | Raytheon Company Div Rmd Strategic (USA) |
| M38510/20302BEB | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| ROM/PROM FAMILY 005 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 42900 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
NSN 5962-01-202-2961 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-202-2961 has 4 cross-referenced part numbers: 722901-50 (Raytheon Company Div Rmd Strategic), M38510/20302BEB (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), ROM/PROM FAMILY 005 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 42900 (Raytheon Company Div Rmd Strategic).
There are 7 known substitutes for 5962-01-202-2961: 5950-01-025-9666, 5962-01-078-7029, 5962-01-202-2959 and 4 more. Verify interchangeability with system specifications before substitution.
Key specifications for 42900: Inclosure Material: CERAMIC; Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC; Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC; Body Width: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN. 19 total characteristics are documented in the Federal Logistics Information System.