The Microcircuit,memory, cataloged under National Stock Number 5962-01-171-5580, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Dba Raytheon. Government technical data includes 17 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 11 commercial cross-references from 7 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-171-5580 |
| Primary Part Number | 932905-102 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Dba Raytheon |
| Status | ACTIVE |
| Maximum Power Dissipation Rating | 715.0 MILLIWATTS |
| Inclosure Configuration | FLAT PACK |
| Body Length | 0.520 INCHES MAXIMUM IN |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Terminal Type and Quantity | 18 FLAT LEADS |
| Voltage Rating and Type Per Characteristic | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| Memory Device Type | ROM |
| Test Data Document | 82577-932892 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Terminal Surface Treatment | SOLDER |
| Time Rating Per Chacteristic | 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Input Circuit Pattern | 12 INPUT |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Body Height | 0.085 INCHES MAXIMUM IN |
| Features Provided | BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT |
| Inclosure Material | CERAMIC |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Body Width | 0.390 INCHES MAXIMUM IN |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 82S185 | Philips Semiconductors Inc (USA) |
| RY4289-002 | Fairchild Semiconductor Corp Semiconductor Div Hq (USA) |
| HM-7685 | Renesas Electronics America Inc (USA) |
| N0078-102 | Renesas Electronics America Inc (USA) |
| ROM/PROM FAMILY 078 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 53S841 | Mmi/amd (USA) |
| CC6323-102 | Philips Semiconductors Inc (USA) |
| 19581 | Mmi/amd (USA) |
| DH76052-2 | Advanced Micro Devices Inc Dba AMD Austin (USA) |
| 932892-1B | Raytheon Company Dba Raytheon (USA) |
| 932905-102 PRIMARY | Raytheon Company Dba Raytheon (USA) |
NSN 5962-01-171-5580 is a Microcircuit,memory, manufactured by Raytheon Company Dba Raytheon, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-171-5580 has 11 cross-referenced part numbers: 82S185 (Philips Semiconductors Inc), RY4289-002 (Fairchild Semiconductor Corp Semiconductor Div Hq), HM-7685 (Renesas Electronics America Inc), N0078-102 (Renesas Electronics America Inc), ROM/PROM FAMILY 078 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)) and 6 more.
There are 12 known substitutes for 5962-01-171-5580: 5310-00-022-3069, 6680-01-080-8210, 5962-01-123-1357 and 9 more. Verify interchangeability with system specifications before substitution.
Key specifications for 932905-102: Maximum Power Dissipation Rating: 715.0 MILLIWATTS; Inclosure Configuration: FLAT PACK; Body Length: 0.520 INCHES MAXIMUM IN; Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC. 17 total characteristics are documented in the Federal Logistics Information System.