The Microcircuit,memory, cataloged under National Stock Number 5962-01-123-2000, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Dba Raytheon. Government technical data includes 18 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 5 commercial cross-references from 5 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-123-2000 |
| Primary Part Number | 932905-830 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Dba Raytheon |
| Status | ACTIVE |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Terminal Type and Quantity | 18 FLAT LEADS |
| Terminal Surface Treatment | SOLDER |
| Memory Device Type | ROM |
| Time Rating Per Chacteristic | 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Memory Capacity | UNKNOWN |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Body Width | 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Inclosure Material | CERAMIC |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Maximum Power Dissipation Rating | 409.6 MILLIWATTS |
| Input Circuit Pattern | 12 INPUT |
| Body Length | 0.890 INCHES MINIMUM AND 0.930 INCHES MAXIMUM IN |
| Body Height | 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM IN |
| Inclosure Configuration | FLAT PACK |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR AND W/ENABLE |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| CC6323-830 | Philips Semiconductors Inc (USA) |
| ROM/PROM FAMILY 078 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| N0078-830 | Renesas Electronics America Inc (USA) |
| FD1464-18760 | Mmi/amd (USA) |
| 932905-830 PRIMARY | Raytheon Company Dba Raytheon (USA) |
NSN 5962-01-123-2000 is a Microcircuit,memory, manufactured by Raytheon Company Dba Raytheon, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-123-2000 has 5 cross-referenced part numbers: CC6323-830 (Philips Semiconductors Inc), ROM/PROM FAMILY 078 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), N0078-830 (Renesas Electronics America Inc), FD1464-18760 (Mmi/amd), 932905-830 (Raytheon Company Dba Raytheon).
There are 12 known substitutes for 5962-01-123-2000: 5962-01-123-1357, 5962-01-123-1999, 5962-01-171-5579 and 9 more. Verify interchangeability with system specifications before substitution.
Key specifications for 932905-830: Overall Height: 0.350 INCHES MAXIMUM IN; Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC; Test Data Document: 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).; Terminal Type and Quantity: 18 FLAT LEADS. 19 total characteristics are documented in the Federal Logistics Information System.