The Microcircuit,memory, cataloged under National Stock Number 5962-01-168-5845, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 19 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-168-5845 |
| Primary Part Number | 47040-1 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Maximum Power Dissipation Rating | 794.0 MILLIWATTS |
| Input Circuit Pattern | 10 INPUT |
| Memory Capacity | UNKNOWN |
| Memory Device Type | PROM |
| Time Rating Per Chacteristic | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Terminal Surface Treatment | SOLDER |
| Voltage Rating and Type Per Characteristic | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| Case Outline Source and Designator | D-2 MIL-M-38510 |
| Inclosure Material | CERAMIC |
| Body Height | 0.185 INCHES MAXIMUM IN |
| Body Length | 0.840 INCHES MAXIMUM IN |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND W/ACTIVE PULL-UP AND 3-STATE OUTPUT AND W/ENABLE AND PROGRAMMABLE |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Inclosure Configuration | DUAL-IN-LINE |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| M38510/20402BEA | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| 93446DMQB | Fairchild Semiconductor Corp (USA) |
| 722912-50 | Raytheon Company Div Rmd Strategic (USA) |
| 47040-1 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
NSN 5962-01-168-5845 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-168-5845 has 4 cross-referenced part numbers: M38510/20402BEA (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), 93446DMQB (Fairchild Semiconductor Corp), 722912-50 (Raytheon Company Div Rmd Strategic), 47040-1 (Raytheon Company Div Rmd Strategic).
There are 12 known substitutes for 5962-01-168-5845: 5962-01-043-7919, 5962-01-085-4444, 5962-01-101-2202 and 9 more. Verify interchangeability with system specifications before substitution.
Key specifications for 47040-1: Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC; Operating Temp Range: -55.0 TO 125.0 CELSIUS DEGC; Maximum Power Dissipation Rating: 794.0 MILLIWATTS; Input Circuit Pattern: 10 INPUT. 19 total characteristics are documented in the Federal Logistics Information System.