The Microcircuit,memory, cataloged under National Stock Number 5962-01-108-8797, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Philips Semiconductors Inc. Government technical data includes 20 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 22 commercial cross-references from 15 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-108-8797 |
| Primary Part Number | N82S181F |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Philips Semiconductors Inc |
| Status | ACTIVE |
| Inclosure Configuration | DUAL-IN-LINE |
| Inclosure Material | CERAMIC AND GLASS |
| Test Data Document | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| Time Rating Per Chacteristic | 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Specification/standard Data | 81349-MIL-M-38510/209 GOVERNMENT SPECIFICATION |
| Memory Device Type | ROM |
| Memory Capacity | UNKNOWN |
| Terminal Surface Treatment | SOLDER |
| Case Outline Source and Designator | D-3 MIL-M-38510 |
| Voltage Rating and Type Per Characteristic | 5.5 VOLTS MAXIMUM POWER SOURCE |
| Terminal Type and Quantity | 24 PRINTED CIRCUIT |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Features Provided | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND SCHOTTKY AND W/ENABLE AND 3-STATE OUTPUT |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Maximum Power Dissipation Rating | 1.4 WATTS |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Body Height | 0.150 INCHES MINIMUM AND 0.205 INCHES MAXIMUM IN |
| Body Width | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN |
| Input Circuit Pattern | 14 INPUT |
| Body Length | 1.290 INCHES MAXIMUM IN |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| N82S181F | Philips Semiconductors Inc (USA) |
| BM1010-700 | Northrop Grumman Corp Electronic Systems Defensive System Div (USA) |
| 312213-001 | Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems (USA) |
| MM6381-1J | Mmi/amd (USA) |
| 01-45240-20 | Computer Automation Inc |
| 4040967-604 | Honeywell International Inc. Dba Honeywell International (USA) |
| 4014313-01 | Raytheon Technical Services Company (USA) |
| AM27S181DM | Northrop Grumman Corp Electronic Systems Defensive System Div (USA) |
| 5381-1 | Mmi/amd (USA) |
| DM875181N | National Semiconductor Corporation (USA) |
| 477-1434-004 | The Boeing Company Div Legacy Boeing Hb1 (USA) |
| 7823817 | Ogden Air Logistics Center (USA) |
| 29633DM | Fairchild Semiconductor Corp Semiconductor Div Hq (USA) |
| M38510/20904BJ | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| JAN-M38510/20904BJX | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| MIL-M-38510/209 | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| M38510/20904BJB | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| RB825181F | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| ROM/PROM HEAD 028 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 143736-203 | L3harris Technologies, Inc. (USA) |
NSN 5962-01-108-8797 is a Microcircuit,memory, manufactured by Philips Semiconductors Inc, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-108-8797 has 22 cross-referenced part numbers: N82S181F (Philips Semiconductors Inc), BM1010-700 (Northrop Grumman Corp Electronic Systems Defensive System Div), 312213-001 (Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems), MM6381-1J (Mmi/amd), 01-45240-20 (Computer Automation Inc) and 17 more.
There are 12 known substitutes for 5962-01-108-8797: 6115-00-292-9011, 5975-00-674-7974, 5962-01-105-5554 and 9 more. Verify interchangeability with system specifications before substitution.
Key specifications for N82S181F: Inclosure Configuration: DUAL-IN-LINE; Inclosure Material: CERAMIC AND GLASS; Test Data Document: 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.).; Time Rating Per Chacteristic: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS. 20 total characteristics are documented in the Federal Logistics Information System.