PartsTable TECHNICAL DATA SHEET
JULY 2026Technical Data Sheet

932883-4Microcircuit,memory

Raytheon Company Dba Raytheon · NSN 5962-01-078-2553 · FSC 5962 · No Item Name Available
Verified by PartsTable
NSN 5962-01-078-2553 — this item is cataloged by the U.S. Government under National Stock Number 5962-01-078-2553. Primary manufacturer part number: 932883-4.
Features
  • Microcircuit,memory — FSC 5962
  • Inclosure Material: CERAMIC AND GLASS
  • Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC
  • Time Rating Per Chacteristic: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS
  • Memory Device Type: ROM
  • Terminal Surface Treatment: SOLDER
  • Memory Capacity: UNKNOWN
  • Test Data Document: 82577-932883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
Applications
  • Industrial maintenance and repair
  • Government and military logistics
  • Equipment overhaul and refurbishment
General Description

The Microcircuit,memory, cataloged under National Stock Number 5962-01-078-2553, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Dba Raytheon. Government technical data includes 18 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 10 commercial cross-references from 7 manufacturers, enabling identification through both NSN and commercial part number lookups. 7 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.

Technical Specifications
ParameterValue
NSN5962-01-078-2553
Primary Part Number932883-4
Item NameMicrocircuit,memory
FSC / FSG5962 / 59 — No Item Name Available
ManufacturerRaytheon Company Dba Raytheon
StatusACTIVE
Inclosure MaterialCERAMIC AND GLASS
Output Logic FormTRANSISTOR-TRANSISTOR LOGIC
Time Rating Per Chacteristic80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS
Memory Device TypeROM
Terminal Surface TreatmentSOLDER
Memory CapacityUNKNOWN
Test Data Document82577-932883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
Voltage Rating and Type Per Characteristic5.5 VOLTS MAXIMUM POWER SOURCE
Terminal Type and Quantity18 PRINTED CIRCUIT
Input Circuit Pattern12 INPUT
Features ProvidedHERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMED AND W/ENABLE AND W/DECODED OUTPUT AND BIPOLAR AND 3-STATE OUTPUT
Operating Temp Range-55.0 TO 125.0 CELSIUS DEGC
Storage Temp Range-65.0 TO 150.0 CELSIUS DEGC
Body Height0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM IN
Body Width0.310 INCHES MAXIMUM IN
Body Length0.882 INCHES MINIMUM AND 0.925 INCHES MAXIMUM IN
Maximum Power Dissipation Rating532.5 MILLIWATTS
Inclosure ConfigurationDUAL-IN-LINE
Lifecycle & Compliance
Acquisition StatusACTIVE
HAZMATNo
Verified Substitutes 7
5962-01-078-0181932883-2 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Dba Raytheon
5962-01-078-1815932883-6 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Dba Raytheon
5962-01-078-2554932883-8 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Dba Raytheon
5962-01-217-55988560289-5 INTERCHANGEABLE
Microcircuit,memory
L3 Technologies, Inc. Div Communication Systems-East
5962-01-217-55998560289-6 INTERCHANGEABLE
Microcircuit,memory
L3 Technologies, Inc. Div Communication Systems-East
5962-01-217-56008560289-7 INTERCHANGEABLE
Microcircuit,memory
L3 Technologies, Inc. Div Communication Systems-East
1015-01-423-690450131 INTERCHANGEABLE
Brush,cleaning,artillery
Atlanta Brush Co
Cross-Reference Index
Part NumberManufacturer
17987 Mmi/amd (USA)
MM5353-1J Mmi/amd (USA)
HR10702 Fairchild Semiconductor Corp (USA)
B2052-4 Renesas Electronics America Inc (USA)
CC5194 Philips Semiconductors Inc (USA)
ROM/PROM FAMILY 017 Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA)
S82S137F Philips Semiconductors Inc (USA)
932883-4 PRIMARY Raytheon Company Dba Raytheon (USA)
HM9-7643-B2052-4 Renesas Electronics America Inc (USA)
DH75703-4 Advanced Micro Devices Inc Dba AMD Austin (USA)
Related Parts
5962-01-078-0181INTERCHANGEABLE
MICROCIRCUIT,MEMORY
932883-2
5962-01-078-1815INTERCHANGEABLE
MICROCIRCUIT,MEMORY
932883-6
5962-01-078-2554INTERCHANGEABLE
MICROCIRCUIT,MEMORY
932883-8
5962-01-217-5598INTERCHANGEABLE
MICROCIRCUIT,MEMORY
8560289-5
5962-01-217-5599INTERCHANGEABLE
MICROCIRCUIT,MEMORY
8560289-6
5962-01-217-5600INTERCHANGEABLE
MICROCIRCUIT,MEMORY
8560289-7
1015-01-423-6904INTERCHANGEABLE
BRUSH,CLEANING,ARTILLERY
50131

Frequently Asked Questions

What is NSN 5962-01-078-2553?

NSN 5962-01-078-2553 is a Microcircuit,memory, manufactured by Raytheon Company Dba Raytheon, classified under FSC 5962 (No Item Name Available). Status: active.

What are the part numbers for NSN 5962-01-078-2553?

NSN 5962-01-078-2553 has 10 cross-referenced part numbers: 17987 (Mmi/amd), MM5353-1J (Mmi/amd), HR10702 (Fairchild Semiconductor Corp), B2052-4 (Renesas Electronics America Inc), CC5194 (Philips Semiconductors Inc) and 5 more.

What NSN replaces 5962-01-078-2553?

There are 7 known substitutes for 5962-01-078-2553: 5962-01-078-0181, 5962-01-078-1815, 5962-01-078-2554 and 4 more. Verify interchangeability with system specifications before substitution.

What are the specifications of 932883-4?

Key specifications for 932883-4: Inclosure Material: CERAMIC AND GLASS; Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC; Time Rating Per Chacteristic: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS; Memory Device Type: ROM. 18 total characteristics are documented in the Federal Logistics Information System.

Validated with multiple authoritative sources, including Government, OEM, and Certified sources.
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