5800583-942011-102 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

5800583-942011-102: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include overall_width: 0.620 INCHES MAXIMUM IN, overall_length: 0.340 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), semiconductor_material: SILICON, terminal_type_and_quantity: 2 PIN, power_rating_per_characteristic: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-552-0798, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

5800583-942011-102

NSN: 5961-00-552-0798
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: C0426 — HENSOLDT SENSORS GMBH (DEU)

SPECIFICATIONS

overall_width	0.620 INCHES MAXIMUM IN
overall_length	0.340 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	2 PIN
power_rating_per_characteristic	50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
voltage_rating_in_volts_per_characteristic	80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
maximum_operating_temp_per_measurement_point	200.0 CELSIUS JUNCTION DEGC
NSN	5961-00-552-0798

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.340 INCHES MAXIMUM IN
OVERALL WIDTH	0.620 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
TERMINAL TYPE AND QUANTITY	2 PIN
POWER RATING PER CHARACTERISTIC	50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION

SUBSTITUTES & CROSS-REFERENCES 3

2N6295Reference document

Same NSN cross-reference

Reference document — Secondary reference

1N970BReference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

352-1014-020Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusCancelled· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 5800583-942011-102?

5800583-942011-102 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 5800583-942011-102?

There are 3 known substitutes for 5800583-942011-102: 2N6295, 1N970B, 352-1014-020. Substitute compatibility should be verified for your specific system.

What is the NSN for 5800583-942011-102?

5800583-942011-102 is cataloged in the U.S. Government catalog under NSN 5961-00-552-0798. This indicates validated use in U.S. government and defense supply chains.

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5800583-942011-102 — SEMICONDUCTOR DEVICE,DIODE

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