2N6295 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N6295: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.700 INCHES MAXIMUM IN, overall_height: 0.348 INCHES MAXIMUM IN, overall_length: 0.620 INCHES MAXIMUM IN, transfer_ratio: 4.0 MINIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER, mounting_method: UNTHREADED HOLE(S). This part is cataloged in the U.S.

Government catalog under NSN 5961-00-552-0798, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N6295

NSN: 5961-00-552-0798
NIINs: 005520798, 010686252, 011779146, 012208117
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 04713 — FREESCALE SEMICONDUCTOR, INC. (USA)

SPECIFICATIONS

material	CERAMIC ENCLOSURE
overall_width	0.700 INCHES MAXIMUM IN
overall_height	0.348 INCHES MAXIMUM IN
overall_length	0.620 INCHES MAXIMUM IN
transfer_ratio	4.0 MINIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
mounting_method	UNTHREADED HOLE(S)
special_features	JUNCTION PATTERN ARRANGEMENT: NPN
features_provided	BURN IN AND HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT-DARLINGTON CONNECTED
semiconductor_material	SILICON
end_item_identification	ACFT MODEL SH-60B
mounting_facility_quantity	4
NSN	5961-00-552-0798

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.340 INCHES MAXIMUM IN
OVERALL WIDTH	0.620 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
TERMINAL TYPE AND QUANTITY	2 PIN
POWER RATING PER CHARACTERISTIC	50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION

SUBSTITUTES & CROSS-REFERENCES 3

1N970BReference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

352-1014-020Reference document

Same NSN cross-reference

Reference document — Secondary reference

5800583-942011-102Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusCancelled· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N6295?

2N6295 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 2N6295?

There are 3 known substitutes for 2N6295: 1N970B, 352-1014-020, 5800583-942011-102. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N6295?

2N6295 is cataloged in the U.S. Government catalog under NSN 5961-00-552-0798. This indicates validated use in U.S. government and defense supply chains.

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2N6295 — SEMICONDUCTOR DEVICE,DIODE

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