RESISTOR,VARIABLE,WIRE WOUND,NON. Key specifications include material: PLASTIC ENCLOSURE, mounting_method: TERMINAL, internal_configuration: FIELD EFFECT, semiconductor_material: SILICON, terminal_type_and_quantity: 3 UNINSULATED WIRE LEAD, current_rating_per_characteristic: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-01-081-8123, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| mounting_method | TERMINAL |
| internal_configuration | FIELD EFFECT |
| semiconductor_material | SILICON |
| terminal_type_and_quantity | 3 UNINSULATED WIRE LEAD |
| current_rating_per_characteristic | 50.00 MILLIAMPERES MAXIMUM GATE CURRENT |
| voltage_rating_in_volts_per_characteristic | 30.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| maximum_operating_temp_per_measurement_point | 125.0 CELSIUS AMBIENT AIR DEGC |
| joint_electronic_device_engineering_council/jedec/case_outline_designation | TO-106 |
| NSN | 5961-01-081-8123 |
| MATERIAL | PLASTIC ENCLOSURE |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM GATE CURRENT |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS AMBIENT AIR DEGC |
| MOUNTING METHOD | TERMINAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-106 |
| SEMICONDUCTOR MATERIAL | SILICON |