352-0882-030 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

352-0882-030: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.450 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), overall_diameter: 0.875 INCHES MAXIMUM IN, internal_configuration: JUNCTION CONTACT, semiconductor_material: SILICON, terminal_type_and_quantity: 2 PIN AND 1 CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-421-6415, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

352-0882-030

NSN: 5961-00-421-6415
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 95105 — ROCKWELL COLLINS, INC. DIV COLLINS AEROSPACE - MISSION SYSTEMS (USA)

SPECIFICATIONS

overall_length	0.450 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
overall_diameter	0.875 INCHES MAXIMUM IN
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	2 PIN AND 1 CASE
internal_junction_configuration	NPN
power_rating_per_characteristic	100.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
maximum_operating_temp_per_measurement_point	150.0 CELSIUS JUNCTION DEGC
electrode_internally-electrically_connected_to_case	COLLECTOR
NSN	5961-00-421-6415

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 500.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 700.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

OVERALL DIAMETER: 0.875 INCHES MAXIMUM IN

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

INTERNAL JUNCTION CONFIGURATION: NPN

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	500.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 500.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 700.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
OVERALL DIAMETER	0.875 INCHES MAXIMUM IN
MOUNTING METHOD	UNTHREADED HOLE(S)
INTERNAL JUNCTION CONFIGURATION	NPN
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.450 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
CURRENT RATING PER CHARACTERISTIC	2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC

SUBSTITUTES & CROSS-REFERENCES 2

2N5157Reference document

Same NSN cross-reference

Reference document — Secondary reference

352-0882-031Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 352-0882-030?

352-0882-030 is a TRANSISTOR.

What parts can replace 352-0882-030?

There are 2 known substitutes for 352-0882-030: 2N5157, 352-0882-031. Substitute compatibility should be verified for your specific system.

What is the NSN for 352-0882-030?

352-0882-030 is cataloged in the U.S. Government catalog under NSN 5961-00-421-6415. This indicates validated use in U.S. government and defense supply chains.

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352-0882-030 — TRANSISTOR

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