2N5157 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N5157: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 1.050 INCHES MAXIMUM IN, overall_height: 0.328 INCHES MAXIMUM IN, overall_length: 0.450 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), overall_diameter: 0.875 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: NPN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-162-7697, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N5157

NSN: 5961-00-162-7697
NIINs: 001627697, 001810662, 004216415, 004935251
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 07256 — SILICON TRANSISTOR CORPORATION DBA SAME (USA)

SPECIFICATIONS

overall_width	1.050 INCHES MAXIMUM IN
overall_height	0.328 INCHES MAXIMUM IN
overall_length	0.450 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
overall_diameter	0.875 INCHES MAXIMUM IN
special_features	JUNCTION PATTERN ARRANGEMENT: NPN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	2 PIN AND 1 CASE
specification/standard_data	81349-MIL-S-19500/371 GOVERNMENT SPECIFICATION
NSN	5961-00-162-7697

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 700.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

OVERALL DIAMETER: 0.875 INCHES MAXIMUM IN

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	500.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 700.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
OVERALL DIAMETER	0.875 INCHES MAXIMUM IN
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.328 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC

SUBSTITUTES & CROSS-REFERENCES 1

STA8080Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — no further procurement; issued until stock is exhaustedNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N5157?

2N5157 is a TRANSISTOR.

What parts can replace 2N5157?

There is 1 known substitute for 2N5157: STA8080. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N5157?

2N5157 is cataloged in the U.S. Government catalog under NSN 5961-00-162-7697. This indicates validated use in U.S. government and defense supply chains.

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2N5157 — TRANSISTOR

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