352-0756-060 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

352-0756-060: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.210 INCHES MAXIMUM IN, mounting_method: TERMINAL, overall_diameter: 0.080 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, internal_configuration: FIELD EFFECT. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-030-7243, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

352-0756-060

NSN: 5961-01-030-7243
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 13499 — ROCKWELL COLLINS, INC. DBA COLLINS AEROSPACE GOVERNMENT SYSTEMS DIV COLLINS AEROSPACE - GOVERNMENT SYSTEMS (USA)

SPECIFICATIONS

material	GLASS ENCLOSURE
overall_length	0.210 INCHES MAXIMUM IN
mounting_method	TERMINAL
overall_diameter	0.080 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
power_rating_per_characteristic	175.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	10.00 MILLIAMPERES MAXIMUM GATE CURRENT AND 5.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
voltage_rating_in_volts_per_characteristic	30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 3.5 MAXIMUM GATE TO SOURCE VOLTAGE
maximum_operating_temp_per_measurement_point	200.0 CELSIUS JUNCTION DEGC
NSN	5961-01-030-7243

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 3.5 MAXIMUM GATE TO SOURCE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.080 INCHES MAXIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: FIELD EFFECT

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 3.5 MAXIMUM GATE TO SOURCE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.080 INCHES MAXIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.210 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	FIELD EFFECT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	10.00 MILLIAMPERES MAXIMUM GATE CURRENT AND 5.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
MATERIAL	GLASS ENCLOSURE

SUBSTITUTES & CROSS-REFERENCES 2

SFE264U4Reference document

Same NSN cross-reference

Reference document — Secondary reference

FN2172Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 352-0756-060?

352-0756-060 is a TRANSISTOR.

What parts can replace 352-0756-060?

There are 2 known substitutes for 352-0756-060: SFE264U4, FN2172. Substitute compatibility should be verified for your specific system.

What is the NSN for 352-0756-060?

352-0756-060 is cataloged in the U.S. Government catalog under NSN 5961-01-030-7243. This indicates validated use in U.S. government and defense supply chains.

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352-0756-060 — TRANSISTOR

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