FN2172 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

FN2172: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.210 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.157 INCHES MINIMUM IN, overall_diameter: 0.080 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-501-1006, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

FN2172

NSN: 5961-00-501-1006
NIINs: 005011006, 010307243
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 17856 — SILICONIX INCORPORATED DIV SILICONIX (USA)

SPECIFICATIONS

material	GLASS ENCLOSURE
overall_length	0.210 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.157 INCHES MINIMUM IN
overall_diameter	0.080 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
power_rating_per_characteristic	175.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	10.00 MILLIAMPERES MAXIMUM GATE CURRENT AND 5.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
voltage_rating_in_volts_per_characteristic	30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 3.5 MAXIMUM GATE TO SOURCE VOLTAGE
NSN	5961-00-501-1006

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.5 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.210 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.157 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: FIELD EFFECT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	3.5 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.210 INCHES MAXIMUM IN
TERMINAL LENGTH	0.157 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.080 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	FIELD EFFECT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	15.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT

SUBSTITUTES & CROSS-REFERENCES 4

SFE264-4Reference document

Same NSN cross-reference

Reference document — Secondary reference

F2131AReference document

Same NSN cross-reference

Reference document — Secondary reference

352-0756-120Reference document

Same NSN cross-reference

Reference document — Secondary reference

352-0756-062Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is FN2172?

FN2172 is a TRANSISTOR.

What parts can replace FN2172?

There are 4 known substitutes for FN2172: SFE264-4, F2131A, 352-0756-120 and 1 more. Substitute compatibility should be verified for your specific system.

What is the NSN for FN2172?

FN2172 is cataloged in the U.S. Government catalog under NSN 5961-00-501-1006. This indicates validated use in U.S. government and defense supply chains.

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FN2172 — TRANSISTOR

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