The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.180 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.750 INCHES MAXIMUM IN, overall_diameter: 0.370 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX, internal_configuration: FIELD EFFECT. This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-01-187-8685, indicating validated use in U.S.
government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.180 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 0.750 INCHES MAXIMUM IN |
| overall_diameter | 0.370 INCHES MAXIMUM IN |
| features_provided | HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX |
| internal_configuration | FIELD EFFECT |
| semiconductor_material | SILICON |
| end_item_identification | NSN 5895-01-277-2680; CONTROL, RECEIVER-TRANSMITTER |
| terminal_circle_diameter | 0.200 INCHES NOMINAL IN |
| terminal_type_and_quantity | 3 UNINSULATED WIRE LEAD |
| power_rating_per_characteristic | 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| current_rating_per_characteristic | -6.50 AMPERES MAXIMUM DRAIN CURRENT |
| NSN | 5961-01-187-8685 |
| OVERALL DIAMETER | 0.360 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM IN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION DEGC |
| TERMINAL CIRCLE DIAMETER | 0.020 INCHES NOMINAL IN |
| SEMICONDUCTOR MATERIAL | SILICON |
| MOUNTING METHOD | TERMINAL |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| CURRENT RATING PER CHARACTERISTIC | -6.50 AMPERES MAXIMUM DRAIN CURRENT |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |