The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.180 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.340 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN, features_provided: ELECTROSTATIC SENSITIVE, internal_configuration: FIELD EFFECT. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-01-359-3336, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.180 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 0.500 INCHES MINIMUM IN |
| overall_diameter | 0.340 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN |
| features_provided | ELECTROSTATIC SENSITIVE |
| internal_configuration | FIELD EFFECT |
| semiconductor_material | SILICON |
| terminal_circle_diameter | 0.200 INCHES NOMINAL IN |
| terminal_type_and_quantity | 3 UNINSULATED WIRE LEAD |
| power_rating_per_characteristic | 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| current_rating_per_characteristic | -6.50 AMPERES MAXIMUM DRAIN CURRENT |
| voltage_rating_in_volts_per_characteristic | -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -100.0 MAXIMUM DRAIN TO GATE VOLTAGE |
| NSN | 5961-01-359-3336 |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION DEGC |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM IN |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-39 |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL IN |
| OVERALL DIAMETER | 0.340 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -100.0 MAXIMUM DRAIN TO GATE VOLTAGE |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| POWER RATING PER CHARACTERISTIC | 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| SEMICONDUCTOR MATERIAL | SILICON |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |