29C4643: SEMICONDUCTOR DEVICE,DIODE.
The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, power_rating_per_characteristic: 1.5 WATTS NOMINAL TOTAL DEVICE DISSIPATION, current_rating_per_characteristic: 100.00 MILLIAMPERES NOMINAL MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION, voltage_rating_in_volts_per_characteristic: 15.0 NOMINAL REGULATOR VOLTAGE, DC, maximum_operating_temp_per_measurement_point: 200.0 CELSIUS JUNCTION DEGC. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-391-7159, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | SILICON SEMICONDUCTOR |
| power_rating_per_characteristic | 1.5 WATTS NOMINAL TOTAL DEVICE DISSIPATION |
| current_rating_per_characteristic | 100.00 MILLIAMPERES NOMINAL MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| voltage_rating_in_volts_per_characteristic | 15.0 NOMINAL REGULATOR VOLTAGE, DC |
| maximum_operating_temp_per_measurement_point | 200.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-391-7159 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 NOMINAL REGULATOR VOLTAGE, DC |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES NOMINAL MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| MATERIAL | SILICON SEMICONDUCTOR |
| MATERIAL | PLASTIC ENCLOSURE |
| POWER RATING PER CHARACTERISTIC | 1.5 WATTS NOMINAL TOTAL DEVICE DISSIPATION |