1N5929B — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

1N5929B: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, power_rating_per_characteristic: 1.5 WATTS NOMINAL TOTAL DEVICE DISSIPATION, current_rating_per_characteristic: 100.00 MILLIAMPERES NOMINAL MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION, voltage_rating_in_volts_per_characteristic: 15.0 NOMINAL REGULATOR VOLTAGE, DC, maximum_operating_temp_per_measurement_point: 200.0 CELSIUS JUNCTION DEGC. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-391-7159, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

1N5929B

NSN: 5961-01-391-7159
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 04713 — FREESCALE SEMICONDUCTOR, INC. (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
power_rating_per_characteristic	1.5 WATTS NOMINAL TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	100.00 MILLIAMPERES NOMINAL MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
voltage_rating_in_volts_per_characteristic	15.0 NOMINAL REGULATOR VOLTAGE, DC
maximum_operating_temp_per_measurement_point	200.0 CELSIUS JUNCTION DEGC
NSN	5961-01-391-7159

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL REGULATOR VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES NOMINAL MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION

•

MATERIAL: SILICON SEMICONDUCTOR

•

POWER RATING PER CHARACTERISTIC: 1.5 WATTS NOMINAL TOTAL DEVICE DISSIPATION

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	15.0 NOMINAL REGULATOR VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
CURRENT RATING PER CHARACTERISTIC	100.00 MILLIAMPERES NOMINAL MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	PLASTIC ENCLOSURE
POWER RATING PER CHARACTERISTIC	1.5 WATTS NOMINAL TOTAL DEVICE DISSIPATION

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Demilitarization required — critical (Q)

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FREQUENTLY ASKED QUESTIONS

What is 1N5929B?

1N5929B is a SEMICONDUCTOR DEVICE,DIODE.

What is the NSN for 1N5929B?

1N5929B is cataloged in the U.S. Government catalog under NSN 5961-01-391-7159. This indicates validated use in U.S. government and defense supply chains.

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1N5929B — SEMICONDUCTOR DEVICE,DIODE

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