146473-4 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

146473-4: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, grain_control: NOT RATED, physical_form: POWDER, image_contrast: MEDIUM, overall_length: 0.300 INCHES MAXIMUM IN, mounting_method: TERMINAL. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-415-2015, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

146473-4

NSN: 5961-00-415-2015
NIINs: 004152015, 007823851
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 00752 — L3HARRIS TECHNOLOGIES, INC. DBA HARRIS CORP DIV ANTENNA PRODUCTS (USA)

SPECIFICATIONS

material	GLASS ENCLOSURE
grain_control	NOT RATED
physical_form	POWDER
image_contrast	MEDIUM
overall_length	0.300 INCHES MAXIMUM IN
mounting_method	TERMINAL
overall_diameter	0.140 INCHES MAXIMUM IN
special_features	COMMERCIAL FILM PROJECT,SIMILAR TO NSN'S 6750-01-354-0717 AND 6750-01-354-0718; 6 PACKAGES OF CONCENTRATE UNIT QTY,BOX
features_provided	HERMETICALLY SEALED CASE
reproduction_type	BLACK AND WHITE
unit_package_content_form	SINGLE UNIT FOR MIXING
material_processing_method	AUTOMATIC
NSN	5961-00-415-2015

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.2 MAXIMUM NOMINAL REGULATOR VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.140 INCHES MAXIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

MATERIAL: SILICON SEMICONDUCTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	8.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.140 INCHES MAXIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.300 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS ENCLOSURE
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD
POWER RATING PER CHARACTERISTIC	0.25 WATTS MAXIMUM TOTAL POWER DISSIPATION

SUBSTITUTES & CROSS-REFERENCES 1

1146473-4Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 146473-4?

146473-4 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 146473-4?

There is 1 known substitute for 146473-4: 1146473-4. Substitute compatibility should be verified for your specific system.

What is the NSN for 146473-4?

146473-4 is cataloged in the U.S. Government catalog under NSN 5961-00-415-2015. This indicates validated use in U.S. government and defense supply chains.

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146473-4 — SEMICONDUCTOR DEVICE,DIODE

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