1146473-4 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

1146473-4: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.300 INCHES MAXIMUM IN, mounting_method: TERMINAL, overall_diameter: 0.140 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, terminal_type_and_quantity: 2 UNINSULATED WIRE LEAD. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-415-2015, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

1146473-4

NSN: 5961-00-415-2015
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 52151 — CONTINENTAL ELECTRONICS CORP (USA)

SPECIFICATIONS

material	GLASS ENCLOSURE
overall_length	0.300 INCHES MAXIMUM IN
mounting_method	TERMINAL
overall_diameter	0.140 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
power_rating_per_characteristic	0.25 WATTS MAXIMUM TOTAL POWER DISSIPATION
voltage_rating_in_volts_per_characteristic	8.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
maximum_operating_temp_per_measurement_point	200.0 CELSIUS JUNCTION DEGC
NSN	5961-00-415-2015

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.2 MAXIMUM NOMINAL REGULATOR VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.140 INCHES MAXIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

MATERIAL: SILICON SEMICONDUCTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	8.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.140 INCHES MAXIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.300 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS ENCLOSURE
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD
POWER RATING PER CHARACTERISTIC	0.25 WATTS MAXIMUM TOTAL POWER DISSIPATION

SUBSTITUTES & CROSS-REFERENCES 1

146473-4Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 1146473-4?

1146473-4 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 1146473-4?

There is 1 known substitute for 1146473-4: 146473-4. Substitute compatibility should be verified for your specific system.

What is the NSN for 1146473-4?

1146473-4 is cataloged in the U.S. Government catalog under NSN 5961-00-415-2015. This indicates validated use in U.S. government and defense supply chains.

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1146473-4 — SEMICONDUCTOR DEVICE,DIODE

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