13153243-1 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

13153243-1: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.250 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.700 INCHES MINIMUM IN, overall_diameter: 0.085 INCHES NOMINAL IN, features_provided: BURN IN AND HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-189-0610, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

13153243-1

NSN: 5961-01-189-0610
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 18876 — US ARMY AVIATION AND MISSILE COMMAND (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.250 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.700 INCHES MINIMUM IN
overall_diameter	0.085 INCHES NOMINAL IN
features_provided	BURN IN AND HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
current_rating_per_characteristic	1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 20.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
voltage_rating_in_volts_per_characteristic	400.0 MAXIMUM FORWARD VOLTAGE, DC
maximum_operating_temp_per_measurement_point	150.0 CELSIUS AMBIENT AIR DEGC
NSN	5961-01-189-0610

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM FORWARD VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.085 INCHES NOMINAL IN

•

TERMINAL LENGTH: 0.700 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE

•

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 20.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	400.0 MAXIMUM FORWARD VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.085 INCHES NOMINAL IN
TERMINAL LENGTH	0.700 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.250 INCHES MAXIMUM IN
FEATURES PROVIDED	BURN IN AND HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 20.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	CERAMIC ENCLOSURE

SUBSTITUTES & CROSS-REFERENCES 1

UES1106Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 13153243-1?

13153243-1 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 13153243-1?

There is 1 known substitute for 13153243-1: UES1106. Substitute compatibility should be verified for your specific system.

What is the NSN for 13153243-1?

13153243-1 is cataloged in the U.S. Government catalog under NSN 5961-01-189-0610. This indicates validated use in U.S. government and defense supply chains.

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13153243-1 — SEMICONDUCTOR DEVICE,DIODE

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