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UES1106 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

UES1106: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_length: 0.250 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.700 INCHES MINIMUM IN, overall_diameter: 0.085 INCHES NOMINAL IN, features_provided: BURN IN AND HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-188-6042, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
UES1106
NSN: 5961-01-188-6042
NIINs: 011886042, 011890610
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 43611 — MICROSEMI CORP - MASSACHUSETTS (USA)
SPECIFICATIONS
materialCERAMIC ENCLOSURE
overall_length0.250 INCHES MAXIMUM IN
mounting_methodTERMINAL
terminal_length0.700 INCHES MINIMUM IN
overall_diameter0.085 INCHES NOMINAL IN
features_providedBURN IN AND HERMETICALLY SEALED CASE
terminal_type_and_quantity2 UNINSULATED WIRE LEAD
current_rating_per_characteristic1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 20.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
voltage_rating_in_volts_per_characteristic400.0 MAXIMUM FORWARD VOLTAGE, DC
maximum_operating_temp_per_measurement_point150.0 CELSIUS AMBIENT AIR DEGC
NSN5961-01-188-6042
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN UES1106 MFR OEM SEMICONDUCTOR DEVICE,DIODE
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
•
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS AMBIENT AIR DEGC
•
OVERALL DIAMETER: 0.085 INCHES MAXIMUM IN
•
TERMINAL LENGTH: 0.700 INCHES MINIMUM IN
•
MOUNTING METHOD: TERMINAL
•
FEATURES PROVIDED: HERMETICALLY SEALED CASE
•
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
TECHNICAL CHARACTERISTICS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC400.0 MAXIMUM REVERSE VOLTAGE, PEAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER0.085 INCHES MAXIMUM IN
TERMINAL LENGTH0.700 INCHES MINIMUM IN
MOUNTING METHODTERMINAL
OVERALL LENGTH0.250 INCHES MAXIMUM IN
FEATURES PROVIDEDHERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC20.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
MATERIALSILICON SEMICONDUCTOR
MATERIALGLASS ENCLOSURE
SUBSTITUTES & CROSS-REFERENCES 7
91590424Same NSN cross-reference
Same NSN cross-reference
Also cataloged under this NSN
BYV26BReference document
Same NSN cross-reference
Reference document — Secondary reference
117606-002Same NSN cross-reference
Same NSN cross-reference
Also cataloged under this NSN
UES1106HR201Reference document
Same NSN cross-reference
Reference document — Secondary reference
30307447USame NSN cross-reference
Same NSN cross-reference
Also cataloged under this NSN
A531A193-101Reference document
Same NSN cross-reference
Reference document — Advisory reference — outside the item-of-supply concept
LIFECYCLE
NSN statusCancelled· U.S. Government catalog
Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is UES1106?
UES1106 is a SEMICONDUCTOR DEVICE,DIODE.
What parts can replace UES1106?
There are 7 known substitutes for UES1106: 91590424, BYV26B, 117606-002 and 4 more. Substitute compatibility should be verified for your specific system.
What is the NSN for UES1106?
UES1106 is cataloged in the U.S. Government catalog under NSN 5961-01-188-6042. This indicates validated use in U.S. government and defense supply chains.
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