123A879-4 — MICROCIRCUIT,MEMORY

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

123A879-4: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include special_features: NUCLEAR HARDNESS CRITICAL ITEM, features_provided: BIPOLAR AND PROGRAMMED AND RADIATION HARDENED AND SCHOTTKY, output_logic_form: BIPOLAR METAL-OXIDE SEMICONDUCTOR, inclosure_material: CERAMIC, memory_device_type: PROM, storage_temp_range: -65.0 TO 150.0 CELSIUS DEGC. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-374-0093, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

123A879-4

NSN: 5962-01-374-0093
FSC: 5962 — Microcircuits, Electronic
CAGE: 03640 — LOCKHEED MARTIN CORPORATION DIV ROTARY AND MISSION SYSTEMS (USA)

SPECIFICATIONS

special_features	NUCLEAR HARDNESS CRITICAL ITEM
features_provided	BIPOLAR AND PROGRAMMED AND RADIATION HARDENED AND SCHOTTKY
output_logic_form	BIPOLAR METAL-OXIDE SEMICONDUCTOR
inclosure_material	CERAMIC
memory_device_type	PROM
storage_temp_range	-65.0 TO 150.0 CELSIUS DEGC
operating_temp_range	-55.0 TO 125.0 CELSIUS DEGC
hybrid_technology_type	MONOLITHIC
end_item_identification	VALVE-SELECTI E/I FSCM 70339
inclosure_configuration	DUAL-IN-LINE
terminal_surface_treatment	SOLDER
specification/standard_data	67268-8200803JA GOVERNMENT STANDARD AND 03640-123A879-4 MANUFACTURERS SOURCE CONTROL
NSN	5962-01-374-0093

COMPONENT DIAGRAM

KEY FEATURES

•

HYBRID TECHNOLOGY TYPE: MONOLITHIC

•

INCLOSURE MATERIAL: CERAMIC

•

TERMINAL SURFACE TREATMENT: SOLDER

•

CRITICALITY CODE JUSTIFICATION: FEAT

•

FEATURES PROVIDED: BIPOLAR AND PROGRAMMED AND RADIATION HARDENED AND SCHOTTKY

•

INCLOSURE CONFIGURATION: DUAL-IN-LINE

•

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM OUTPUT SINK

•

MEMORY DEVICE TYPE: PROM

TYPICAL APPLICATIONS

Server memory expansion for virtualization workloads
Database performance optimization (in-memory computing)
VDI and remote desktop session hosting
High-performance computing (HPC) clusters
Mail server and collaboration platform scaling
Application server tier expansion

TECHNICAL CHARACTERISTICS

HYBRID TECHNOLOGY TYPE	MONOLITHIC
INCLOSURE MATERIAL	CERAMIC
TERMINAL SURFACE TREATMENT	SOLDER
CRITICALITY CODE JUSTIFICATION	FEAT
FEATURES PROVIDED	BIPOLAR AND PROGRAMMED AND RADIATION HARDENED AND SCHOTTKY
INCLOSURE CONFIGURATION	DUAL-IN-LINE
CURRENT RATING PER CHARACTERISTIC	100.00 MILLIAMPERES MAXIMUM OUTPUT SINK
MEMORY DEVICE TYPE	PROM
DEPARTURE FROM CITED DESIGNATOR	ALTERED BY PROGRAMMING & MARKING
CASE OUTLINE SOURCE AND DESIGNATOR	D-3 MIL-M-38510

SUBSTITUTES & CROSS-REFERENCES 3

ROM/PROMReference document

Same NSN cross-reference

Reference document — Secondary reference

8200803JAReference document

Same NSN cross-reference

Reference document — Secondary reference

NH123A879-4Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandDemilitarization required — mutilation + specific procedure

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FREQUENTLY ASKED QUESTIONS

What is 123A879-4?

123A879-4 is a MICROCIRCUIT,MEMORY.

What parts can replace 123A879-4?

There are 3 known substitutes for 123A879-4: ROM/PROM, 8200803JA, NH123A879-4. Substitute compatibility should be verified for your specific system.

What is the NSN for 123A879-4?

123A879-4 is cataloged in the U.S. Government catalog under NSN 5962-01-374-0093. This indicates validated use in U.S. government and defense supply chains.

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