11507747 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

11507747: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.510 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.250 INCHES IN, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-080-1469, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

11507747

NSN: 5961-01-080-1469
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 18876 — US ARMY AVIATION AND MISSILE COMMAND (USA)

SPECIFICATIONS

material	GLASS ENCLOSURE
overall_length	0.510 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
features_provided	HERMETICALLY SEALED CASE
nominal_thread_size	0.250 INCHES IN
semiconductor_material	SILICON
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	0.682 INCHES NOMINAL IN
terminal_type_and_quantity	1 THREADED STUD AND 2 TAB, SOLDER LUG
current_rating_per_characteristic	40.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE
voltage_rating_in_volts_per_characteristic	20.0 MAXIMUM PEAK NEGATIVE GATE VOLTAGE
NSN	5961-01-080-1469

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM PEAK NEGATIVE GATE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

OVERALL WIDTH ACROSS FLATS: 0.682 INCHES NOMINAL IN

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	20.0 MAXIMUM PEAK NEGATIVE GATE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.510 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS	0.682 INCHES NOMINAL IN
NOMINAL THREAD SIZE	0.250 INCHES IN
CURRENT RATING PER CHARACTERISTIC	40.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 2

C147PBReference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

40C120BSame NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 11507747?

11507747 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace 11507747?

There are 2 known substitutes for 11507747: C147PB, 40C120B. Substitute compatibility should be verified for your specific system.

What is the NSN for 11507747?

11507747 is cataloged in the U.S. Government catalog under NSN 5961-01-080-1469. This indicates validated use in U.S. government and defense supply chains.

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11507747 — SEMICONDUCTOR DEVICE,THYRISTOR

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