40C120B: SEMICONDUCTOR DEVICE,THYRISTOR.
The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.510 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.250 INCHES IN, semiconductor_material: SILICON. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-080-1469, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | GLASS ENCLOSURE |
| overall_length | 0.510 INCHES MAXIMUM IN |
| mounting_method | THREADED STUD(S) |
| features_provided | HERMETICALLY SEALED CASE |
| nominal_thread_size | 0.250 INCHES IN |
| semiconductor_material | SILICON |
| thread_series_designator | UNF |
| mounting_facility_quantity | 1 |
| overall_width_across_flats | 0.682 INCHES NOMINAL IN |
| terminal_type_and_quantity | 1 THREADED STUD AND 2 TAB, SOLDER LUG |
| current_rating_per_characteristic | 40.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE |
| voltage_rating_in_volts_per_characteristic | 20.0 MAXIMUM PEAK NEGATIVE GATE VOLTAGE |
| NSN | 5961-01-080-1469 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM PEAK NEGATIVE GATE VOLTAGE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 1 |
| MOUNTING METHOD | THREADED STUD(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.510 INCHES MAXIMUM IN |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| OVERALL WIDTH ACROSS FLATS | 0.682 INCHES NOMINAL IN |
| NOMINAL THREAD SIZE | 0.250 INCHES IN |
| CURRENT RATING PER CHARACTERISTIC | 40.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE |