ZB1039 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

ZB1039: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include hole_diameter: 0.125 INCHES NOMINAL IN, overall_height: 0.375 INCHES NOMINAL IN, overall_length: 1.025 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), special_features: CASE MAY CONTAIN BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES, style_designator: FLAT TOP COUNTERBORED. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-233-4417, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

ZB1039

NSN: 5961-00-233-4417
NIINs: 002334417, 012298469
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 12969 — MICRO USPD INC (USA)

SPECIFICATIONS

hole_diameter	0.125 INCHES NOMINAL IN
overall_height	0.375 INCHES NOMINAL IN
overall_length	1.025 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
special_features	CASE MAY CONTAIN BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES
style_designator	FLAT TOP COUNTERBORED
nominal_thread_size	0.190 INCHES IN
semiconductor_material	SILICON
first_counterbore_depth	0.250 INCHES NOMINAL IN
thread_series_designator	UNF
first_counterbore_diameter	0.219 INCHES NOMINAL IN
mounting_facility_quantity	1
NSN	5961-00-233-4417

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 10.0 MAXIMUM GATE VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM IN

•

NOMINAL THREAD SIZE: 0.190 INCHES IN

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 10.0 MAXIMUM GATE VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.025 INCHES MAXIMUM IN
OVERALL WIDTH ACROSS FLATS	0.437 INCHES MAXIMUM IN
NOMINAL THREAD SIZE	0.190 INCHES IN
CURRENT RATING PER CHARACTERISTIC	8.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 6.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
SPECIAL FEATURES	CASE MAY CONTAIN BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES

SUBSTITUTES & CROSS-REFERENCES 2

STX3272Reference document

Same NSN cross-reference

Reference document — Secondary reference

S19325Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is ZB1039?

ZB1039 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace ZB1039?

There are 2 known substitutes for ZB1039: STX3272, S19325. Substitute compatibility should be verified for your specific system.

What is the NSN for ZB1039?

ZB1039 is cataloged in the U.S. Government catalog under NSN 5961-00-233-4417. This indicates validated use in U.S. government and defense supply chains.

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ZB1039 — SEMICONDUCTOR DEVICE,THYRISTOR

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