XC-556-G2: SEMICONDUCTOR DEVICE,DIODE.
The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: GALLIUM ARSENIDE PHOSPHIDE SEMICONDUCTOR, overall_length: 0.340 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES NOMINAL IN, overall_diameter: 0.230 INCHES MAXIMUM IN, terminal_type_and_quantity: 2 PIN. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-012-2947, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | GALLIUM ARSENIDE PHOSPHIDE SEMICONDUCTOR |
| overall_length | 0.340 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 1.000 INCHES NOMINAL IN |
| overall_diameter | 0.230 INCHES MAXIMUM IN |
| terminal_type_and_quantity | 2 PIN |
| power_rating_per_characteristic | 115.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| current_rating_per_characteristic | 40.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC |
| voltage_rating_in_volts_per_characteristic | 2.8 NOMINAL FORWARD VOLTAGE, PEAK |
| maximum_operating_temp_per_measurement_point | 105.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-012-2947 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.8 NOMINAL FORWARD VOLTAGE, PEAK |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 105.0 CELSIUS JUNCTION DEGC |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM IN |
| TERMINAL LENGTH | 1.000 INCHES NOMINAL IN |
| MOUNTING METHOD | TERMINAL |
| OVERALL LENGTH | 0.340 INCHES MAXIMUM IN |
| CURRENT RATING PER CHARACTERISTIC | 40.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC |
| MATERIAL | PLASTIC ENCLOSURE |
| MATERIAL | GALLIUM ARSENIDE PHOSPHIDE SEMICONDUCTOR |
| TERMINAL TYPE AND QUANTITY | 2 PIN |